Interfacial Reaction of TiNHfSiON Gate Stack in High Temperature Annealing英文文献.pdfVIP

Japanese Journal of Applied Physics Vol. 46, No. 4B, 2007, pp. 1921–1928 #2007 The Japan Society of Applied Physics Interfacial Reaction of TiN/HfSiON Gate Stack in High-Temperature Annealing for Gate-First Metal–Oxide–Semiconductor Field-Effect Transistors Takeo MATSUKI, Seiji INUMIYA , Nobuyuki MISE, Takahisa EIMORI, and Yasuo NARA Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan (Received September 26, 2006; accepted January 4, 2007; published online April 24, 2007) The interfacial reaction of a TiN/HfSiON/SiO2 gate stack in high-temperature annealing was investigated from the viewpoint of the redistribution of the elements of gate stack materials. Oxygen incorporation enhanced the redistribution of the elements not only of the dielectric film of HfSiON/SiO2 but also of the gate electrode film of TiN. Oxygen incorporation in high- temperature annealing enhances the partial release of Hf, N, and Si from HfSiON or the disassembly of the HfSiON film, which leads to an increase in the equivalent-oxide thickness (EOT). The EOT increase can be determined by the combination of the decrease in the HfSiON film caused by the Hf and N release from HfSiON and the increase in the interfacial layer created by the oxidation of the Si substrate surface by the penetrating oxygen. It is also found that Ti diffused from the TiN into the interfacial layer through the HfSiON/SiO2 . The suppression of oxygen incorporation is a key technique in the high- temperature annealing of metal/high-k gate stacks. [DOI: 10.1143/JJAP.46.1921] KEYWORDS: high-k gate dielectrics, metal gate, postdeposition annealing, TiN, HfSiON, MOSFET, thermal stability thermal degradation taking into account the annealing 1. Introduction a