选择性镀金、OSP干膜的资料.pptVIP

How to obtain the better selective ENIG  ---- ENIG And W250 Dry Film Why Selective Electroless Ni/Au? Apply on cellular phone board. Why electroless Ni/Au and OSP? OSP : soldering. Ni/Au : key pads. Some request from IC substrate. Who are the makers? 2000 Worldwide Cellular phone production: 435 mmpcs ENIG trend worldwide Problems How can D/F adhere to S/M? How can D/F withstand 90 degree C temperature? How can D/F conform to surface? How to prevent D/F leaching to Ni/Au bath? How to strip D/F after ENIG? Problems Requirement of D/F to match Eless Ni/Au. D/F and solder mask interaction. Pretreatment----acid residue,moisture. Lamination---- interface height difference. Exposure----inadequate polymerization. Development----lower drag-into the bath Post-action for leaching control . The interface difference 1st DF is on copper, 2nd DF on solder mask. Solder mask can further interact with dry film under UV light. Solder mask has different composition. The interface complex structure change into cross linked and three-dimensional. Lamination Higher lamination temperature and pressure will benefit the conformation.The limit is to avoid air bubble and dry film wrinkle. Lower down lamination speed to 1-1.5 m/min. Vacuum lamination confirmed to be better. Exposure RST tablet suggest to above 18 under S/M surface with higher light intensity (5mw/cm2). RST on S/M will be 1-2 steps less than Cu Suggest to employ Silver halide artwork. Development Break point at 35-50% should be better to minimize organic material drag-in the bath W250 dry film has been confirmed with wide development latitude. (see Right picture , Break Point:35%, sodium carbonate:0.85%) Leaching impacts on ENIG Decrease reaction activity. Change Ni-P crystal structure and grid orientation. Result in high phosphorous content in Ni-P alloy. (see the following side-reaction mechanism of ENIG) PO2ˉ＋3H-＋2H2O――→P＋1.5H2↑＋4OH- Remark: PO2ˉis formed by the catal