不同基板1W硅衬底蓝光LED老化性能研究.PDFVIP

30 6 Vol. 30, No. 6 2010 6 ACTA OPTICA SINICA June, 2010 : 025322239(2010) 062 17492 06 不同基板1 W 硅衬底蓝光LED 老化性能研究 1 1, 2 1 1 1 1, 2 汪延明 熊传兵 王光绪 肖宗湖 熊贻婧 江风益 1 , 330047 2 () , 330029 (Si) ( GaN)LED , , LED , , , ;; + TN312 . 8 A doi: 10. 3788/ AO 1749 Study on Aging Charact er izat ion of 1 W Epitaxy on Si Substr at e Blu e LED Based on Differ ent Substr at es 1 1, 2 1 1 Wang Yanming Xiong Chuanbing Wang Guangxu Xiao Zonghu 1 1, 2 Xiong Yijing Jiang Feng i 1 Ed cat ion Min istry En gin eerin g Resear ch Cen ter for L min escen ce Materials an d Devices , Nanchang Un iver sit y , Nan chang , J ian gxi 330047, Chin a 2 Lat tice Power ( Jian gxi ) Corporation , Nanchan g, Jian gxi 330029, Chin a Abstract GaN- based light- emitting diodes ( LED) thin films were successfull transferred from the original Si ( 111) substrate to Si substrate via bonding, copper substrate and copper - chromium substrate via electroplating respectivel , and then the vertical - structure LED were fabricated. The aging characteristic of those LED was investigated. The result indicated that the devices of copper substrate have the most stable photoelectric properties. These different performances were attributed to the different st ress states and thermal conductivities, and it was possible that the main influencing factor of reliabil