[研究生入学考试]2010-2011chapter 71.ppt

Chapter 7 : Bipolar Junction Transistor(双极结型晶体管) Bipolar transistor 双极晶体管 emitter junction 发射结 collector junction 收集结 base 基区 transit time 渡越时间 common base 共基极 lifetime 寿命 excess hole 非平衡空穴 diffusion length 扩散长度 injection 注入 generation-recombination 产生-复合 emitter injection efficiency 发射极注入效率 current transfer ratio电流转移比 the common-base current gain共基极电流增益 the common-emitter current gain共发射极电流增益 amplification factor放大因子 We will use the p-n-p transistor for most illustration. The main advantage of the p-n-p for discussing transistor action is that hole flow and current are in the same direction. Once these basic ideas are established for the p-n-p device, it is simple to relate them to the more widely used the n-p-n transistor. 7.1 Fundamentals of BJT operation To understand how the current through two terminals can be controlled by small changes in the current at a third terminal, let’s consider the reverse-biased p-n junction 7.2 Amplification with BJT It remains to be shown that the collector current iC can be controlled by variations in the small current iB. In fact, we can show from space charge neutrality arguments that iB can indeed be used to determine the magnitude of iC. ?t : the transit time for a average excess hole from emitter to collector ?p :the average hole lifetime Lp: the hole diffusion length Because the base width Wb Lp, ?t ?p While the average electron waits ?p seconds for recombination, many individual holes can enter and leave the base region, each with an average transit time ?t. In particular, for each electron entering from the base contact, ?p / ?t holes can pass from emitter to collector while maintaining space charge neutrality. Thus If the electron supply to the base (iB) is restricted, the traffic of holes from the emitter to base is correspondingly reduced. This can be argued by supposing that the hole injection does continue despite the restriction on electrons from the base contact. The results would be