电源技术-UC3875组成的1000W移相全桥软开关.pdfVIP

APT9703 By: Ken Dierberger E T O N A New Generation of Power MOSFET Offers N Inproved Performance at Reduced Cost O I T A C I L P P A 1 A New Generation Of Power MOSFETs Offers Improved Performance At Reduced Cost Ken Dierberger Application Engineering Manager Advanced Power Technology Inc. Bend, Oregon 97702 ABSTRACT In today’s power electronic market place, as in other areas of electronics, reducing cost is necessary to stay competitive. A new generation of high voltage Power MOSFETs offers lower on-resistance (RDS(ON)) using the same chip area as a previous generation of devices. Smaller die MOSFETs are also being produced with this technology that have the same RDS(ON) as a previous generation but now at a lower price. This paper covers the use of these devices in a phase shifted control mode full bridge DC/DC converter featuring zero voltage switching. A comparison was made between the performance of an older generation device to the new generation device. The comparison shows that the new smaller die device, while providing reduced cost, produced equal performance to the older generation. Introduction transitions occur at a time in the resonant cycle where the switch current is zero, Advances in resonant and quasi-resonant facilitating zero current switching, hence zero power conversion technology offer alternative power switching. While true, two obvious solutions to a conflicting set of square wave concerns can impede the quest