Nanofabrication and characterization of nanosturcture device 纳米材料制备和表征材料纳米结构的装置.pptVIP

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Nanofabrication and characterization of nanosturcture device 纳米材料制备和表征材料纳米结构的装置.ppt

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Nanofabrication and characterization of nanosturcture device 纳米材料制备和表征材料纳米结构的装置.ppt

Nanofabrication and Characterization of nanosturcture Device Using Scanning Probe Microscope Shu-zee Alencious Lo Contents Nanofabrication using SPM Nanostructure device characterization using SPM Current limitation and solution Nanofabrication Using SPM STM Field -evaporation AFM Field evaporation Scratching and pouncing “Dip-pen” NSOM Moving Atoms by STM(using Van der Waals Force) Field Evapolation by STM Field Evapolation by STM Scratching and pouncing Field Evaporation by AFM Field Evaporation by AFM “Dip-Pen” nanolithography NSOM NSOM Characterization of Nanostructure Device Using SPM STM Magnetic force microscope(MFM) Frictional force microscope Chemical force microscope NSOM Apertureless STM STM were used to measure quantum behavior of nanowire Nanoindentation Pulling slowly from surface Measure conductivity while pulling Magnetic Force Microscope Frictional Force Microscope Frictional Force Microscope Frictional Force Microscope Chemical Force Microscope Apertureless NSOM Apertureless NSOM Current Limitation and Solution Speed Constant height mode for STM Short Cantilever for AFM Multiple tip array Finite probe shape Nanotube Finite Probe Shape Problem A Nanotube AFM Probe Multiple Tip Array * D. M. Eigler and E. K. Schweizer, Nature 344, 524 (1990). T. T. Tsong, Phys. Rev. B 44,13703(1991). Sample: Cleaved MoS2 Tip:Tungsten tip Ordinary operation condition: 0.5V, 0.1nA Gap distance: 0.5nm Pulsed voltage:-5.5V, 70ms Linewidth:0.32nm S. Hosaka, H. Koyanagi, A. Kikukawa, Y. Maruyama and R. Imura, J. Vac. Sci. Technol. B 12, 3 (1994) M. Wendel, S. Kühn, H. Lorenz, J. P. Kotthaus and M. Holland , Appl. Phys. Lett. 65, 14(1994) S. Hosaka, H. Koyanagi, A. Kikukawa, Y. Maruyama and R. Imura, J. Vac. Sci. Technol. B 12, 3 (1994) Sample:1.7nm SiO2 on top of Si Tip:SiO2 probe with gold coating Pulsed Voltage:-30V, 5ms Dot diameter:50-20nm S. Hosaka, H. Koyanagi, A. Kikukawa, Y. Maruyama and R. Imura, J. Vac. Sci. Technol. B 12, 3 (1994) Richard D. Piner, Jin