ghz cmos低噪声放大器设计与仿真 word格式.docxVIP

AbstractAccordingtotherequirementofthecommunicationofmicro-satellite,alow noiseandhighgainradio-frequencyfront-endamplifierwithanactiveBalun basedonTSMC0.18μmRFCMOStechnologyhasbeendesignedinthisthesis. ThelayoutwasdesignedinCadenceVirtuoso.ThecharacteristicoftheRFdevicediffersfromthelowfrequencydevice, sotheresearchontheRFcharacteristicofdevicesinCMOStechnologyisthe keyfordesigningtheradiofrequencyintegratedcircuit.Atfirst,thisthesis studiedthespeedandthenoisecharacteristicoftheMOSFET,gettingthe relationshipoffTandbiasvoltage,andthecontributionofeachnoisesourceto thetotalnoise.Thecharacteristicof the capacitor and the inductor has been analyzed,andtheirequivalentcircuitwaspresentedalso.Then,thispaperhasanalyzedthecommongatetopologyandthecommon sourcetopology,discussedtheiradvantagesanddisadvantages,gettingtothe commongatetopologyisexcelledthecommonsourcetopologyinthe characteristicofnoiseandgain.ThenthecurrentLNAdesignandoptimization techniquesweresummarized.ThosetechniquesincludetheCNMtechnique,the SNIMtechnique,thePCNOtechniqueandthePCSNIMtechniquerespectively. Amongthosetechniques,thePCSNIMtechniquehasanalyzedcarefully,which designstepshasbeengivenalso.Intheend,accordingtotherequirementofthesatellitecommunication systemRF-frondend,ThethesisputforwardreplacingthetraditionalBalunwith theactiveBalun,andputasingle-endedLNAinthefrontoftheBalun,thus carryingoutboththefunctionoftheLNAandBalun.ThePCSNIMtechnique wasappliedtodesignasingle-endedLNA.Anotherdesignfromthe considerationofthesystemisanactiveBalun.Then,acircuithasbeendesigned combiningadvantagesofeachcircuit.Simulationresultsofthiscircuitincludenoisefigureof0.844dB,gainof26.65dB,Phaseerrorisbetterthan0.2o,whilegainerrorisbelow0.1dB.Finally,thelayoutwasdesigned.KeywordsCMOS;RFIC;LNA;Balun目录摘要IAbstractII第1章绪论11.1 课题背景11.2 系统分析21.2.1“微型核”信息电子系统21.2.2 射频前端结构33.4 本章小结42第4章具有非平衡变换功能的低噪声放大器设计434.1 设计指标434.2 单端低噪声放大器设计444.3 有源差分Balun设计484.4 具有非平衡变换功能的低噪声放大器设计524.5 版图设计554.6 本章小结56结论58参考文献59攻读学位期间发表的学术论文63哈尔滨工业大学硕士学位论文原