脉冲成核钨工艺的研究与改善-集成电路工程专业论文.docx

目 录1课题背景及选题意义 ······························································································· 11.1 集成电路金属互连技术的起源和现状 ····························································· 11.2 课题研究的意义 ································································································· 22脉冲成核 WCVD 工艺的相关介绍32.1WCVD 工艺简介32.1.1 CVD 工艺原理32.1.2 钨的化学气相淀积性质 ············································································· 42.1.3 脉冲成核 WCVD 的说明72.2WCVD 在半导体制造中的发展与应用82.2.1 钨在半导体工艺中的作用 ········································································· 82.3小结 ··················································································································· 133实验工具与量测方法 ····························································································· 143.1 实验设备的介绍 ································································································ 143.1.1 脉冲成核钨生长设备的结构和原理 ························································ 143.1.3 脉冲成核 WCVD 与传统 WCVD 在设备硬件上的改进173.1.4 脉冲成核 WCVD 与传统 WCVD 在制程上的说明183.2 薄膜分析仪器与原理 ························································································ 203.3小结 ··················································································································· 244PNL W 工艺参数和薄膜性能分析及工艺问题254.1 工艺参数对钨沉积的基本影响研究 ······························································· 254.1.1 工艺参数表 ································································································ 254.2 钨薄膜的均匀性研究 ······················································································· 274.3 钨薄膜的应力研究： ······················································································· 284.4 腔体钨薄膜清理过程研究 ··············································································· 304.5 钨气相化学工艺在先进半导体制造发展中的问题 ······································· 314.6小结 ·········································································