fecu)掺杂gesi)基稀磁半导体薄膜的结构及磁性分析word格式论文.docxVIP

high-dose implanted sample. The magnetic domain was observed in MFM. Magnetic measurements showed that the maximum saturated magnetization was 0.46 μB/Fe in the lowest-dose implanted sample (2.0×1016 cm-2). In site and post annealing bothreduced the magnetization. Hall effect measurements revealed that the doped samples were n-type. Furthermore, the saturated magnetization decreased with the increase of the carries concentration. The ferromagnetism of the implanted samples was not dependent on the concentration of the carries, but on the substituted magnetic Fe atoms.3. The Cu-doped Si:Cu films were prepared by Cu-ion implanted into n-Si(100) substrate using metal vapor vacuum arc technology. XRD measurements showed that the singlecrystal structure changed to polycrystal structure after Cu-ion implantation, with some defects, such as interstitial Cu, interstitial Si and Si vacancy, but without any other secondary phases. Cu ions existed as Cu+ ions in the as-implanted samples,and after rapid thermal annealing in a N2 environment, a few Cu2+ ions appeared inthe sample. Hall effect measurements revealed that the Cu-ion implanted Si samples were p-type. Magnetic measurements suggested that all the samples were ferromagnetism at room-temperature. The ferromagnetism was from the interaction between the Cu+ ions and Si vacancies mediated by the hole carriers.Key Words: magnetic semiconductor ion implantation magnetic domain Hall Effect transport property学位论文原创性声明本人所提交的学位论文《Fe/Cu 掺杂 Ge/Si 基稀磁半导体薄膜的结构及磁性 研究》是在导师的指导下，独立进行研究工作所取得的原创性成果。除文中已经 注明引用的内容外，本论文不包括任何其他个人或集体已经发表或撰写过的研究 成果。对本文的研究做出重要贡献的个人和集体，均已在文中标明。 本声明的法律后果由本人承担。 论文作者： 指导教师确认： 年 月 日 年 月 日 学位论文版权使用授权书本论文作者完全了解河北师范大学有权保留并向国家有关部门或机构送交 学位论文的复印件和磁盘，允许论文被查阅和借阅。本人授权河北师范大学可以 将学位论文的全部内容编入有关数据库进行检索，可以采用影印或其它复制手段 保存、汇编学位论文。 论文作者： 指导教师确认： 年 月 日 年 月 日 一引言1.1稀释磁性半导体的概述稀释磁性半导体（DMSs）是在半导体领域中能够提供有效自旋极化载流子的最具 潜力的候选者[1-3]，同时，DMSs 还具备通过调控电场等其他条件来调控其磁学性质的优 势。为了能成功制备出铁磁性和半导体性质集于一体的有应用价值的材料，研究人员在 理论和实验上都付出了很大的努力来解释其内在的物理机制[4]。1.1