宽禁带半导体ZnO薄膜的电化学沉积法制备及光学性质研究3.pdfVIP

Abstract Abstract The wide band gap 11-VI semiconductors offer new exciting possibilitiesforapplicationsinoptoelectronicsandspintronics.Also ZnOisakindofpromisingmaterialforapplicationsinoptoelectronics. LikeGaNithasadirectbandgapof3.3eV，alargeexcitonbindingenergy of60meVatroomtemperatureandcanbeusedinblueandwhitelight emittingdiodes,bluelaserdiodesetc..Comparingtotraditionalmethods forthefabricationofcompoundsemiconductorfilms,electrochemical depositionmethodpresentsseveraladvantagesas:lowcost,large-scale deposition, low temperatureprocessinganddirectcontroloffilm thickness.Inthisstudy,ZnOfilmsweregrownonindiumtinoxide substratebyelectrochemicaldepositionandthen,thesefilmsweremainly studiedintermsoftheinfluenceofappliedconditionssuchasdeposition time,voltageandannealontheirstructuralandopticalproperties.We alsoinvestigatedtheultravioletlasingintheZnOfilms.Inorderto modulatetheultatrvioletlasingofZnOfilms,wepreparedSiO,opal template,depositedZnOonitandobtainedperiodicstructureZnOfilms. Atlast,weinvestigatedthedepositionparametersforZnOfilmswith orientedrodgrains. Themainaspectsofthisworkareasfollowing: 1.Zincoxidethinfilmshavebeenpreparedbyanelectrochemical depositionperformedinachemicalcellwiththree-electrodes,using Zn(N0,)taqueoussolutionastheelectrodepositionsolution.XRDresults indicatethatthesefilmshavehexagonalwurtzitestructure.Films morphologiesandopticalpropertieslargelydependonthedepositiontime, voltageandanneal.Opticaltransmissionandatomicforcedmicroscopy III Abstract (AFM) studiesshow theoptimaldeposition conditionsare:Before depositingZnOthesubstratesurfacewasactivatedat2mAcathodic currentfor15s.DeposittheZnOfilmsin0.1MZn(NO,),aqueoussolution, whichtemperatureregulatedat65C，rangingthedepositionvoltagefrom -0.9to一1.0V,andthedepositiontimeisfrom5to10min. 2.Stimulatedemission