Introduction to Solid State Lighting II 固体照明导论讲解材料.ppt

Output characteristics in AlGaAs, AlGaInP and AlInGaN-based LEDs. Dependences are arbitrarily shifted along vertical axis Current-voltage characteristics of AlGaAs, AlGaInP, and AlInGaN-based high brightness LEDs LIGHT EXTRACTION FROM LEDs Challenges in light extraction Conventional LED chip grown on an absorbing substrate the apex High-brightness LED chip design with thick transparent window layers Light escapes through 6 cones LED Designs with Different Numbers of Escape Cones Improvement of light extraction 1. Transparent conduction layer; 2. Surface roughening (nanotextured surface ); 3. Transparent substrate; 4. Flip-chip configuration; 5. Shaped Chips; 6. Bragg reflectors. Distributed Bragg Reflectors Absorption Losses and Photon Recycling Most of the losses are due to the absorption in the active layer and in the surrounding transparent cladding and window layers The losses in the active layer depend on the probability of the light reemission: absorbed photons can experience reincarnation and get a new chance to find the escape cone If the internal quantum efficiency is high, the photon would be recycled many times until it escapes External Quantum Efficiency and Active Layer 72% external quantum efficiency was demonstrated in an optically pumped AlGaAs/GaAs double heterostructure mounted on a high-reflectivity surface Multiple recycling of the photons was due to the internal quantum efficiency as high as 99.7% In practical LEDs, the internal quantum efficiency is lower than 100% and the absorption in the active layer is often considered as parasitic. Therefore, thin active layers (homogenous or comprised of multiple wells) are often preferred There is an optimum active layer thickness because of a trade-off (compromise) between the active-layer reabsorption and electron confinement, and this thickness depends on the emission wavelength Light extraction: high-brightness AlGaAs double heterostructure LED with transparent substrate LED with transpare