soi mosfet单粒子效应电荷收集机制研究-study on charge collection mechanism of soi mosfet single particle effect.docxVIP

摘要摘要随着半导体技术的不断进步，越来越多的半导体器件应用于航天技术，其单 粒子效应已经成为一个影响微电子器件可靠性的重要因素。作为一种器件辐射加 固的方法，绝缘衬底上硅（SOI）工艺有许多优点，例如较低的功耗、较快的速度、 无闩锁、较强的抗单粒子翻转和瞬时辐射能力等。但是，由于 SOI MOS 器件的独 特结构，可能产生多种寄生效应。研究表明，SOI 结构中寄生双极晶体管效应严重影响器件对单粒子效应的敏感性，已经不可忽视。因此，研究单粒子效应下 SOIMOSFET 的电荷收集机制，使得先进半导体器件单粒子效应模型更加完善，并建 立正确的在轨预计方法。首先，本文在分析 SOI MOSFET 结构和特性的基础上，比较体硅 MOSFET 和 SOI MOSFET 的单粒子效应。其次，结合前人的研究成果，通过理论分析和数值 模拟，深入研究 SOI MOSFET 电荷收集机理，建立了适合 SOI MOSFET 的包含双 极效应的动态单粒子效应电荷收集模型。最后，通过与相同器件的 TCAD 模拟数 据对比，验证了模型的正确性，并对影响因素进行分析。关键词：SOI单粒子效应电荷收集寄生双极效应SOI MOSFET 单粒子效应电荷收集机制研究ABSTRACTABSTRACTWith the development of semiconductor technology, more and more advanced semiconductor devices are used in space, and single event effects are becoming a significant reliability concern for microelectronic devices. As a kind of radiation-hardened method, Silicon-on-insulator (SOI) has the advantages of low power consumption, high speed, no latch-up, low sensitivity to single event effects (SEE) and transient radiation. However, because of the unique structure of SOI MOSFET, there are a variety of parasitic effects, such as parasitic bipolar transistor effect, which seriously affects the sensitivity of devices to SEE. Therefore, the study of charge collection mechanism of SOI MOSFET in SEE would improve the model and establish an accurate on-orbit calculations algorithm of single event upset for advanced semiconductor devices.First of all, based on the summary of the structure and characteristics of SOI MOSFET, single event effects of bulk MOSFET and SOI MOSFET are compared. Secondly, combined with previous studies, the charge collection mechanism of SOI MOSFET in SEE is analyzed. Through theoretical analysis and numerical simulation, a dynamic SEE model of charge collection for SOI MOSFET with the consideration of parasitic bipolar effect is developed. Finally, the model is verified by comparing the data with TCAD simulation for the same devices, and the effecting factors are analyzed.Key words: SOIsingle event effectscharge collectionpar