垂直结构大功率gan-led芯片亮度提高的分析-analysis on brightness enhancement of vertical structure high power gan - led chip.docxVIP

哈尔滨工业大学工程硕士学位论文哈尔滨工业大学工程硕士学位论文-- II -AbstractLight Emitting Diode（LED) is such a semiconductor device, as may emit light. Its size is small, while high-power, low applied power and long lifetime are expected. Recently, LED is gradually substituting the conventional light source. It will act a very important role in future also for environmental protection. In order to promote the brightness and the lifetime, we must overcome some related difficulties, as the luminous intensity, light extraction efficiency, thermal conductivity, ohmic contact, current spreading and so on. In this dissertation, we are mainly interested in the improvement of the V-LED brightness, the light extraction efficiency and its electrical characteristics. The investigation mainly concentrates in three aspects: metal mirror with high reflectivity and LED-light-amplification; low p-ohm contact resistivity; n-electrode design and current spreading.Ni/Ag film works as metal mirror in this case. In all, the LED with thin Ni layer thickness and appropriate annealing temperature shows about 10% improvement in the mirror reflectivity.There is a light amplification in the quantum well active region because of the mutual action between light and the current carrier. Based on the comparison of the coherent light emission at the peaks or troughs of the standing wave with QW region, we show that high reflectivity can increase 30%-40% output power of light, which is consistent with the experimental result.-4Due to the insufficient doping concentration in p-type GaN, the p-GaN ohm contact is an important issue for improving the luminous efficiency. In this thesis, attempts were made for improving the p-GaN ohm contact. By comparing and optimizing processes the best condition for making p-ohm contact was obtained.-4And the specific contact resistance ρC as low as 2.6e(?cm2) could be reached. Wecan deal well with the balance between high reflectivity and low ohmic contact.To improve the current sp