磁控溅射制备znoal透明导电薄膜及其结构 性能与刻蚀性研究-preparation of zno al transparent conductive film by magnetron sputtering and its structural properties and etchability.docxVIP

AbstAbstract PAGE III PAGE III万方数据rate. As the argon gas pressure was increased, the resistivity first decreased and then increased, and the grain shape transform from flaky particle to globe-like grain. The vacuum annealing process decreased the resitivity of films because annealing improved crystal quality and relieved stress and to block off oxygen adsorption. The reisitivity of films with different thickness decreased with the increasing of film thickness because of growth mechanism and crystal quality difference. The surface treatment by hydrochloric acid solution shown that films formed light trapping structure used the smooth surface. But for flaky and globe-like surface, the process smooth the roughness of surface in short time, and aggravated the roughness in long time. The etching behavior of ZAO films was very good in dilute aqua regia, and it could be compatible with ITO etching process.Different applications have different requirements for surface morphology, the flat panel displays require smooth surface, but a-Si:H solar cells require light trapping structure. In this thesis, it has tow ways for two kinds of surface morphology. For smooth surface, the optimum parameter was generalized, which are the doping content is 3wt%; the sputteringpower is 80W; the partial pressure of argon is 1.5Pa; the annealing temperature is 320℃;the target-substrate is 67mm, and the resistivity is 8.6×10-4Ω·cm. For light trapping strutrue, the doping content is 3wt%; the sputtering power is 120W; the partial pressure ofargon is 0.8Pa; the annealing temperature is 320℃; the target-substrate is 67mm, and theresistivity is 8.1×10-4Ω·cm.Key words: ZnO:Al thin film; DC magnetron sputtering; process parameters; resistivity; transmittance; etching*This work was supported by the support program for 100 Young and Middle-agedDisciplinary Leaders in Guangxi Higher Education Institutions under contract No. RC20060809014.目 目 录 PAGE IV PAGE IV万方数据目 录摘 要 IAbstract II HYPERLIN