切换的n型和p型半导体行为诱导高光催化在g-C3N4没有取消活动：（Switching of semiconducting behavior from n-type to p-type induced high photocatalytic NO removal activity in g-C3N4）.pdfVIP

Applied Catalysis B: Environmental 214 (2017) 46–56 Contents lists available at ScienceDirect Applied Catalysis B: Environmental j o u r na l h o m e pa g e : w w w. elsev /locate/apc atb Switching of semiconducting behavior from n-type to p-type induced high photocatalytic NO removal activity in g-C N 3 4 Jianmin Luo a,b,c , Guohui Dong a,d,∗ , Yunqing Zhu d , Zhong Yang c , Chuanyi Wang a,∗ a Laboratory of Environmental Sciences and Technology, Xinjiang Technical Institute of Physics Chemistry, Key Laboratory of Functional Materials and Devices for Special Environments, Chinese Academy of Sciences, Urumqi 830011, China b The Graduate School of Chinese Academy of Science, Beijing, 100049, China c Xinjiang Uygur Autonomous Region Academy of Instrument Analysis, Urumqi 830011,China d School of Environmental Science and Engineering, Shaanxi University of Science and Technology, Xian 710021, China a r t i c l e i n f o a b s t r a c t Article history: The utilization of photocatalytic technology to remove air pollutants has attracted global interest. Received 22 January 2017 However, it still suffers from low removal activities under visible light irradiation. In this study, we Received in revised form 21 April 2017 demonstrated that the switching of the semiconducting behavior from n-type to p-type can efficiently Accepted 3 May 2017 improve the photocatalytic activity of g-C3 N4 for nitric oxide (NO) rem