稀磁半导体gamnn发光及非线性光学特性分析-analysis of light emission and nonlinear optical characteristics of diluted magnetic semiconductor gamnn.docxVIP

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稀磁半导体gamnn发光及非线性光学特性分析-analysis of light emission and nonlinear optical characteristics of diluted magnetic semiconductor gamnn.docx

稀磁半导体gamnn发光及非线性光学特性分析-analysis of light emission and nonlinear optical characteristics of diluted magnetic semiconductor gamnn

我们首先测量了它的结构性质和晶格常数随 Mn 浓度的变化规律;接着 介绍了半导体光学性质的研究方法和实验仪器,即 Raman 散射、光致发 光和 Z 扫描基本原理,所用实验仪器主要是:显微拉曼/发光光谱仪(Jobin Yvon LabRam HR High Resolution 800UV)和搭建的 Z 扫描实验装置。 我们通过研究了(GaMn)N 光致发光特性。观察到了与 Mn 能级跃迁 相关的发光结构并重点分析了位于约 3.28 eV 处的发光峰。通过类氢模型 的有效质量计算来推测了此发光峰的起源,并研究此发光峰的峰位、峰 宽、积分强度随浓度、温度及激发强度的变化规律,来分析在(GaMn)N 中存在的由于无序引起的势能波动以及激子的局域化效应。 本文还通过开孔反射 Z 扫描实验系统研究 GaN 和(GaMn)N 薄膜的 非线性光学性质,借助理论模型对实验结果拟合,测量出 GaN 薄膜和 (GaMn)N/GaN 双层薄膜的非线性折射率 n2。发现(GaMn)N 薄膜也具有负 的非线性折射率 n2,并且随着 Mn 浓度的增加而出现先增加后减少的现 象,表明(GaMn)N 薄膜具有临界浓度,并且当注入浓度达到临界浓度时, (GaMn)N 薄膜的非线性折射率最大。 以上研究得到了国家自然科学基金(编号10774100,和以及教育部“长江学者和创新团队发展计划”的 资助。 关键词:(GaMn)N,发光光谱,Z 扫描,Mn 浓度 PHOTOLUMINESCENCE AND NONLINEAR OPTICAL STUDY OF DILUTED MAGNETIC SEMICONDUCTOR (GaMn)N ABSTRACT This paper concentrates on the optical properties of diluted magnetic semiconductor (DMS) (GaMn)N. DMS have recently arisen considerable interesting for creating a class of “spintronic” semiconductor devices with unprecedented functionality. Particularly, (GaMn)N is a very promising material as a candidate of DMS, since its Curie temperature exceeds room temperature and GaN-based devices have wide applications in the area of high-temperature and big power optoelectronic devices. First we review the studies of the (GaMn)N, including the mechanisms of ferromagnetism, as well as the magnetic, optical, and electrical properties. Since the up-to-date optical properties are still limited and deficient, the majority of our work is assigned to the following aspects: the photoluminescence (PL) characteristics, their dependence on temperature, excitation power and Mn-implantation doses and nonlinear optical properties. The nonlinear optical properties of semiconductors were intensively used in the optoelectronic devices, such as all-optical switches, optical limiters and waveguide formation etc. The investigation of nonlinear optical materials is a hot topic in theoretical and experimental research at all times. Therefore the study of

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