超细sic粉体分散及其陶瓷材料制备-dispersion of ultra-fine sic powder and preparation of ceramic materials.docxVIP

武汉 武汉理工大学硕士学位论文 万方数据 万方数据 Abstract Gelcasting (GC) is the small homogeneous composition with a body molding shrinkage, which shows a clear body strength advantage over other molding methods in the preparation of many oxides. GC molding not only means shaping, but even become an important meaning of improving the material properties. Although the use of GC molding SSiC have been some reports, but look at the performance of the sintered body , using mechanical properties similar to the preparation of SSiC GC molding compression molding , and not like other liquid phase sintering of ceramics that exhibit significantly improved, its causes worth exploring. CIP has the advantage of forming uniform force, less body internal defects, but because of restrictions on the formation mechanism, it cannot guarantee the accuracy of shapes and sizes. Therefore, this issue will be GC forming and molding combine CIP prepare high density, high strength dispersed SiC body. High- strength molded body can get all kinds of complex shape profiled products by machining; this feature is very suitable for high value-added products SSiC industrial production. This essay uses 0.58μmSiC powder as a raw material, removing the elemental silicon powder and elemental carbon by strong oxidizing pickling method. Study on Characteristics of SiC fine powder dispersed in an aqueous solution to optimize dispersant, the pH of the slurry , and the surface of the powder with a coupling agent and a graft-modified PEG, success was obtained solid content was 62vol%, viscosity of 840mPa ? s ( at a shear rate of 50s-1) a low viscosity slurry of SiC . By controlling the amount of initiator and reasonable gelling temperature, molding of the structure of GC homogeneous SiC body, combined CIP molding eliminate residual pores in the green body and get high strength high density SiC body. Since the small amount of sintering aid and it is added in the form of distribution has a great effect on the performance of SSiC. B