槽栅MOSFETs器件特性及其工艺技术研究-微电子学与固体电子学专业论文.docxVIP

摘要 1 摘要 深亚微米范国内的半导体器件面临着很多特性和工艺难题，改变器件结构是 问题的解决方法之一。槽栅 MOSFET 被认为是深亚微米范围内极具应用前景的器 件结构。本文从器件特性、工艺技术以及理论分析三方面对槽栅器件进行了分析 研究。 首先对槽栅器件的性能进行了仿真，并与平面器件进行了比较，指出其性能 上的改进主要源于四槽结构所带来的拐角效应，因而较好地抑制了小尺寸效应， 但同时也导致了漏极驱动能力降低和寄生电容增大的问题。 其次，对槽栅器件的制备工艺进行了模拟仿真，重点是如何较好地解决杂质 元素向栅氧化层中的扩散，并针对该问题提出了若干可行的工艺方法，如改变生 长时的气体组分、改变工艺顺序等。 RIE 刻蚀是槽栅器件制备中的关键工艺步 骤，通过测量 RIE 刻蚀后 Si/Si02 系统的高频和准静态 c-v 曲线，分析研究了 RIE 刻蚀对 Si/Si02界面特性的影响。 论文最后针对槽栅 PMOSFET ，对其阀值电压的解析模型进行了简单推导， 并将理论值与模拟值进行了比较，分析了误差产生的原因。 关键词:槽栅 MOSFET 拐角效应 RIE 阙值电压解析模型 Abstract lt Abstract As advancing into the deep-sub-micrometer regime，semiconductor devices face many di筋culties in characteristic and technology. One of 耻 solutions to these problems is to change the structure of the devices. The grooved gate MOSFET has been reg缸ded 臼 a promising device in the regime and it is investigated in device characteristic，technology and theoretical calculation，respectively in 也is thesis. First，the characteristics of the grooved gate MOSFETs are studied and their simulated performance is comp缸ed wit单位at of conventional p险法r MOSFETs. One point related to the simulation is 也at the improvement in the characteristic comes from the ∞ncave corner e能ct caused by the groove. It is the corner effect that suppresses those efl如ts originating 企om small size. But at the s缸ne tìme，it decreases the drain- current-命iving capability and increases the p盯asitic capacitance. The fabric聪on t创胁。Iogy is simulated，the emphasis is put on 也e penetratìon of the dopant 企om source and draìn to the gate insulator，and some possible ways are put for宵夜d such as changing 也e atlnosphere 部ld the s吨咀ence. RIE is a key step ìn the process ，也e influence of reactive ion etching on the Si/Si02 interface is analyzed by me韶山ing the high frequency and quasi static C-V curve of the interface after etching. At last，a simple analytical model of the 巾eshold voltage is deduced. The calculated values 盯e compared with those simulated ones and the reasons which cause the error are analyzed. Keywords: