带电粒子辐照后砷化镓太阳电池的暗特性及其退火效应材料学专业论文.docx

哈尔滨 哈尔滨工业大学工学硕士学位论文 哈尔滨 哈尔滨工业大学工学硕士学位论文 - - PAGE IV- - - PAGE III - Abstr act Using the measurements of electric properties and numerical simulation methods, the degradation behaviors of the single/triple GaAs solar cells after electron/proton irradiations were investigated and the damage mechanisms was revealed. On this basis, annealing effects were also studied on the irradiated single/triple GaAs solar cells. After deep analysis of double-index model of dark characteristic of the p-n junction, a self-edited program on the configuration of MATLAB software was applied to fit the measured dark I-V curves of the GaAs/Ge and GaInP/GaAs/Ge solar cells. The results indicate that, four dark characteristic parameters of solar cells such as series resistance Rs, shunt resistance Rsh, the diffusion current Is1, and recombination current Is2 could be extracted. For the single-junction GaAs cells irradiated by low-energy protons and high-energy electrons, dark I-V parameters like Rs, Is1 and Is2 increase but Rsh decreases with increasing the particle fluences. Combined with the Monte-Carlo simulations using a commercial SRIM code, it was found that the change processes of the four dark I-V parameters depend on the damage regions in the cells with changing the particle energies. Consquently, the irradiated damages occurred in the base and emitter regions of the cells result in the increase of series resistance and diffusion current, while the damages in the junction region would lead to decreasing shunt resistance but increasing the recombination current. For the triple GaInP/GaAs/Ge cells, particle irradiation can cause the equivalent series resistance to be increased and the equivalent shunt resistance to be decreased. However, both the equivalent Is1 and Is2 of the triple cells show tiny changes due to the current limitation of the top GaInP and the bottom Ge subcells. The results on the annealing effect of the single GaAs cells irradiated by low-energy proton irradiati