高功率脉冲磁控溅射注入与沉积技术研究及CrN薄膜制备材料加工工程专业论文.docxVIP

高功率脉冲磁控溅射注入与沉积技术研究及CrN薄膜制备材料加工工程专业论文.docx

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高功率脉冲磁控溅射注入与沉积技术研究及CrN薄膜制备材料加工工程专业论文

哈尔滨工业大学工学硕士 哈尔滨工业大学工学硕士学位论文 哈尔滨工业大学工学硕士 哈尔滨工业大学工学硕士学位论文 PAGE PAGE VI III III Abstract Plasma immersion ion implantation and deoosition(PIII&D) technology is widely used in the field of film deposition on metals and compounds. With the advantage o f injection and deposition at the same time, high energy particle bombardment and non line of sight, PIII&D has been utilized to treat the components with complex shape. However, the application of PIII&D combined with cathodic arc has been limited due to large particle, equipment complexity and low efficiency. To overcome the shortcoming of conventional PIII & D, a new plasma ion implantation and deposition method with hybrid high-power pulse magnetron sputtering(HPPMS) source as a metal source is developed in our laboratory. This is named as high-power pulse magnetron sputtering implantation and deposition(HPMSID). In this paper the characteristics of glow discharge under high-power pulse magnetron sputtering implantation and deposition was investigated. The uniformity in films thickness has been tested. CrN films were deposited on stainless steels and Ti6Al4V alloys substrate. The surface properties of thin films with different Ar/N2 ratio, gas pressure, high voltage, target spacing have also been studied. The surface morphology, phase structures, wear resistance, micro-hardness, scratch load and corrosion resistance of deposited films have been systematically investigated by scanning electronic microscope (SEM), X-ray diffraction (XRD), ball-on-disk tribometer, Vickers indenter, scratch tester and electrochemistry tester respectively. The results related to the plasma discharge characteristics show that the pulse current flowing through magnetron sputtering target increases with average target current, pulse width on magnetron sputtering target, high-voltage(HV) amplitude and pulse width of high voltage, however, decreases with frequency. The current flowing through the substrate increases with average c

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