高密度等离子体辅助CVD工艺在集成电路制造中应用与改善-集成电路工程专业论文.docxVIP

ABSTRACT The using of the thin film deposition technique plays a great role in the production of the integrated circuits. With its good functions, High Density Plasma Chemical Vapor Deposition (HDP CVD) which is one kind of the thin film deposition technique has been using more and more widely in the real production nowadays. This paper introduces the HDP CVD process principle, equipment and the way of measurement in details, and gives thorough study for the Void Defect which has been found in the production. Because of the development of the integrated circuits, the Critical Dimension of the device has been becoming smaller and smaller, which has challenged the gap-fill ability of the HDP CVD process. During the production of the integrated circuits, we could effectively avoid the happening of the Void Defect by adjusting the deposition-etch ratio. The paper has found out the key process parameter and its regulation of the changing for the deposition rate and etch rate in the HDP CVD process through plenty of testing analysis. Based on his working experience in the film deposition department in the IC factory, the author summarized a method for resolving the void defect through the theory analysis and practices, which is helpful to improve the production efficiency and process stability and enhance the companys competitive ability in the same industry. Key words: Thin film；Deposition；High density plasma；Void 目 录 第一章 绪论 1 1.1 引言 1 HYPERLINK \l _TOC_250022 1.2 CVD 简介 2 HYPERLINK \l _TOC_250021 1.2.1 CVD 工艺原理 2 HYPERLINK \l _TOC_250020 1.2.2 集成电路制造中 CVD 的工艺类型 4 常压 CVD (APCVD) 4 低压 CVD (LPCVD) 5 等离子体辅助 CVD (PECVD) 7 高密度等离子体辅助 CVD (HDP CVD) 10 HYPERLINK \l _TOC_250019 1.3 CVD 技术的发展 11 1.4 本文的思路与创新之处 12 HYPERLINK \l _TOC_250018 第二章 高密度等离子体辅助 CVD 淀积设备和工艺原理 13 HYPERLINK \l _TOC_250017 2.1 HDP CVD 薄膜淀积设备介绍 13 HYPERLINK \l _TOC_250016 CENTURA ULTIMA 机台系统简介 13 HYPERLINK \l _TOC_250015 CENTURA ULTIMA HDP CVD 反应腔简介 16 HYPERLINK \l _TOC_250014 2.2 高密度等离子体辅助 CVD 工艺原理