AlO C N元素加对铁钴基合金软磁薄膜性能影响的研究.docx

AlO C N元素加对铁钴基合金软磁薄膜性能影响的研究.docx

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AlO C N元素加对铁钴基合金软磁薄膜性能影响的研究

优秀毕业论文 精品参考文献资料 AbstractRecently,soft Abstract Recently,soft magnetic thin film has been increasingly applied in industry accompanying the rapid development of electronic information.When the soft magnetic thin films were used as perpendicular magnetic recording head or magnetic induction devises,high saturation magnetization,low coercive force,good high frequency response characteristics were desired.So,it is necessary and significant to study and improve the soft magnetic properties and high frequency response characteristics of soft magnetic thin films.FeCo alloy has been studied systematically because of its highest saturation magnetization.However,it is difficult to obtain excellent soft magnetic properties in FeCo alloy due to its large magnetocrystalline anisotropy constant and saturation magnetostriction coefficients.Therefore,it is one important challenge to improve the soft magnetic properties of FeCo alloy films while maintain its high saturation magnetization.Using suitable underlayers between the substrate and the FeCo films and adding the third element to FeCo Mloy films are the proper methods. In this thesis,three series of FeCo-based thin films were prepared by RF magnetron sputtering.The influence of adding A1-O,C,and N to FeCo films on soft magnetic properties and high frequency characteristics were sudied.The main results are as follows: I. FeCoAlo fiires 1)The FeCoAIO films have high saturation magnetization and good soft magnetic properties:Hce=5.20e,Hch=3.60e.47rMs=21.3kG.The improvement of soft magnetic proerties can be attributed to the refine of grain size in FeCoAl0 films. The amorphous AI-O matrix lies at the boundary of FeCo crystalline granules and limits the grains growing,consequently,enhancing the exchange coupling among grains and reducing the effective anisotropy. 2)The soft magnetic properties of FeCoAIO films are intimately correlated with the sputtering condition.The best sputtering condition:sputtering power P=400W; sputteri

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