cugas2和cuga1xtixs2薄膜制备及其特性.docxVIP

优秀毕业论文 精品参考文献资料 内蒙古大学硕士学位论文 内蒙古大学硕士学位论文 通过(112)峰计算出来的晶粒尺寸随浓度的增大而减小。通过XPS分析得出掺 杂的Ti元素在薄膜中以正三价的形态存在。为了证明中间带的形成，霍尔效应 测试结果显示Ti浓度的增加，载流子浓度随之增加。从吸收光谱图中可以看出， 与未掺杂的CuGaS2薄膜的吸收光谱相比，掺杂后的CuGahTi。s2薄膜对光的吸 收明显拓宽，在掺杂浓度x=0．02时，薄膜出现了中间带的特性。 关键词：CuGaS2薄膜；球磨法；中问带；Ti掺杂 H 万方数据 内蒙古大学硕士学位论文PREPARATION 内蒙古大学硕士学位论文 PREPARATION AND CHAR ACTERIZATION OF CuGaS2 AND CuGalⅨTixS2 THIN FILMS ABSTRACT The intermediate band solar cell(IBSC)has drawn the attention of the scientific community as a means to achieve hi曲一efficiency solar cells．Complete IBSC devices have been manufactured using quantum dots，highly mismatched alloys，or bulk materials with deep—level impurities．CuGaS2 has a relatively wide band gap(2．4 eV)， which is not suitable to act as a light absorption layer in single-junction solar cells． However，the CuGaS2 with a wide band gap is the best host to accommodate an isolated narrow intermediate band for photovoltaic applications． In this thesis，we focus on two aspects of the research by ball milling： 1．Cu2S and Ga2S3 were used as starting materials and maxed with absolute alcohol，then gound them into nanoscale-size pieces by using a ball milling to abtain the required ink for preparing the precursor films．The prepared precursor films were annealed with the rapid thermal treatment process to yield final CuGaS2 films．In order to get the CuGaS2 films with better performance，the stages of spin coating and heat treatment have been optimized compared to the traditional process．The CuGaS2 films were characterized by X-ray diffraction(XRO)、scanning electron microscopy (SEM)、energy dispersive spectroscopy(EDAX)、UV-vis spectrophotometer、 Transmission Electron Microscope(TEM)and analysis of Hall—effect．We got the III 万方数据 内蒙古大学硕士学位论文optimum 内蒙古大学硕士学位论文 optimum parameters for preparing CuGaS2 films．The results show that the spin coating parameters of spin coating machine control in：the low—speed 600 r／min；the high-speed 1 200 r／min，the films were compact with smooth surface relatively．The precurs