纳米技术 陈祖信 13212214.pptxVIP

Speaker: Zuxin Chen;Background The experimental from paper Critique on this paper : ;Ultraviolet detectors;ZnO is a wide band gap (Eg=3.3 ev) semiconductor materials that can be used for ultraviolet photon detection.Duing to its large excition bingding energy(60 ev), ZnO has attracted increasing attention in recent years for potential low-threshold UV lasers that can be integrated with photodetectors. ;In the work, an undoped ZnO layer of 200 nm was grown in aqueous medium as a buffer onto the alumina substrate using zinc acetate precursor. Then Ga-doped ZnO layer and gallium nitrate was grown in aqueous medium on top of the buffer layer for photodetector devices.;Critique;it doesn’t gives the specific data of a rise time and a decay time. The response time measurements is very important for the apply of ultraviolet detectors.; During the past few tears, impressive research efforts have been concentrated on the fabrication and performance of ZnO-based UV photodetectors. Recently, ZnO-based UV photodetectors show good responsivity, high UV/visible contrast ratio, high speed and low noise characteristics, and show the tunability of the detection edge from 380 nm to 225 nm just by varying the Mg mole fraction. All these results indicate that RF sputtering, PLD, MBE and MOCVD are very suitable methods to fabricate ZnO-based UV photodetectors, especially for ZnMgO solar- blind photodetectors. However, the technology of ZnO-based materials and photodetectors is not yet mature. This should inspire more research efforts to address the challenges that remain. ? ;1. M.Razeghi and A.Rogalski, Semiconductor ultraviolet detectors, J. Appl. Phys. 79 (10), 15 May 1996. 2. W.Yang etc, Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films, APL volume 78, number18. 3. S.Choopun, R.D.Vispute etc, Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films, APL volume 80, number 9. 4. S.S. Shinde, K.Y. Rajpure