cmos电感电容压控振荡器设计微电子学与固体电子学专业论文.docxVIP

』匕立交逼厶堂亟±堂位论塞 』匕立交逼厶堂亟±堂位论塞 △垦曼!B△￡! AB STRACT ABSTRACT：With the rapid development of the wireless communication technology, the market arises great demond for radio frequency(RF)integrated circuits(ICs)． Because of the mature technology,low cost and low power consumption，CMOS RFIC becomes the development trend of RF ICs．The Voltage—Controlled Oscillator(vco) holds a very important position in RFICs，which is the main part of PLL，clock recovery circuit and frequency synthesizer．VCO is the bottleneck in CMOS RF ICs because of the random fluctuation shift and phase noise at output frequency．The low quanlity factor(Q)of spiral inductor on silicon(SIOS)is the key point to affect VCO’S performance． In this thesis，the theories and practice of LC VCO are studied；the theory of CMOS negative resistance VCO used in Phase—Locked Loop is analyzed．The thesis introduces the method of”One—port Oscillator”analysis，compares the performances and characteristics of different kinds of”negative—Gm”oscillators．And a 1．4GHz LC VCO has been successfully designed． Since the fully integrated inductors with high quality factor are the key of a LC VCO design in CMOS technology，the structures and realizations of on—chip spiral inductor in CMOS technology,the methods of inductor modeling,and the physical reasons which affects the Q-factor are analyzed．1nhen we introduce the realization in CMOS technology of varactor,which is the other passive component in LC VCO．And the simulations have been done in Cadence． We have studied two analysis methods of phase noise：linear time invariant and nonlinear time invariant．The phase noise theory of oscillator is studied in detml， including Leeson Quasi experimental Model and Impulse Sensitivity Function(ISF)． The characteristic of different area’s phase noise Call be successfully explained by these two methods．Several methods are given for lower phase noise．These methods are applied in an actual VCO and are proved to be effective． Circuit simulation，la