集成电路互连介质sicon薄膜的制备和性能表征集成电路工程专业论文.docxVIP

优秀毕业论文 精品参考文献资料 复 旦 复 旦 大 学 硕 士 学 位 论 文 A b s t r a c t A b str a c t W ith the rap id deve lop m ent o f u ltra large-sca le integrated c ircu its, e lectro n ic co m p o nents have grad ua lly beco m e m o re m iniaturized , h igh-p erfo rm anc e, lo w p ow e r, h igh integratio n . H o w ever ,R C de lay, cro ssta lk no ise and pow e r co n su m p tio n o f the in terco nnect structure b eco m e the im p o rtant fecto r to lim it V L S I. In o rder to red uce interco n nect delay a nd pow er co nsum ptio n o f Integra ted circ uits, th e resea rch a nd d evelopm ent of interconn ect dielectric have becom e an inevitab le trend . In th is p ap er, the S iC O N film s have b een p rep ared usin g 1,5 - trietho x y sily l p he ny lsily lene a m id e，3 - isoprop y l cy c lo hexa ne ，ethano l’w ater,cata lyst b y m eans o f sp in-coatin g. W e a lso system atica lly and co m pa rative ly stud ied th e surface m o rp ho lo gy, che m ica l co rrp o sitio n, therm a l stab ility , e lectrical p rop erties, a nd ana lyzed the effect o f th erm a lannea lin g o n the S iC O N film s.T he exp erim enta l resu lts sho w s that the S iC O N film s have un ifo rm th ick ness, sm ooth surface and no rup ture after annea lin g . T herm o G rav im etric A na ly sis (T G A ) ind icates se ve re w eight lo ss in annealin g terrp eratu re o ver 300 °C .F o urier T ransform in frared sp ectro scop y (F T IR ) ind icates that the c hem ical co m p o sitio n a nd structure o f the film do nt c han ge sign ificantly.A fter b eing annealed betw een 300 and 500 °C for 2 ho urs,the chem ical co rrp ositio n and the structure o f the film are not cha nged sign ificantly . X -ray photo electro n sp ectro scop y (X P S) ana ly ses in d ica te th at the d ielectric film s co nta in S i C ,N ,0 .Its fo und that S iand O com p o nents have no ob v io us deco rrp o sition ，C and N corrp o nents hav e the app arent d eco m po sitio n . W ith the increasin g annea lin