钽掺杂对二氧化钒多晶薄膜相变特性的影响.pdf

第32 卷 第3 期 红 外 技 术 Vol.32 No.3 2010 年3 月 Infrared Technology Mar. 2010 钽掺杂对二氧化钒多晶薄膜相变特性的影响 付学成，李金华，谢建生，袁宁一 （江苏工业学院电子科学与工程系，江苏 常州 213 164） 摘要：将Ta O 与V O 均匀混合，压制成溅射靶，用离子束增强沉积方法在二氧化硅衬底上沉积掺Ta 2 5 2 5 氧化钒薄膜。在氮气中适当退火，形成掺杂二氧化钒多晶薄膜。X射线衍射结果显示，薄膜具有单一 的（002 ）取向。XPS测试表明，膜中V为＋4 价，Ta 以替位方式存在。温度- 电阻率测试表明，薄膜具 有明显的相变行为，原子比为3%的Ta掺杂后，二氧化钒多晶薄膜相变温度降低到约48 ℃。Ta原子的 半径大于V原子的半径，Ta的掺入在薄膜中引入了张应力；5 价Ta 替代4 价V ，在d轨道中引入多余电 子，产生施主能级，这些是掺钽二氧化钒多晶薄膜相变温度降低的原因。 关键词：二氧化钒薄膜；Ta 掺杂；离子束增强沉积 中图分类号：TB34 文献标识码：A 文章编号：1001-8891(2010)03-0173-04 The Influence of Tantalum Doping on the Phase Transition of IBED VO2 Polycrystalline Film FU Xue-cheng，LI Jin-hua ，XIE Jian-sheng，YUAN Ning-yi (Dept. Electronic Science and Technology, Jiangsu Polytechnic University, Changzhou Jiangsu 213016, China) Abstract ：The vanadium oxide film was deposited on the SiO2 substrate by modified Ion Beam Enhanced Deposition (IBED) method. The V O and Ta O mixing powders were pressed as the sputtering target. 2 5 2 5 After annealing in N2 the polycrystalline IBED VO2 film doped with tantalum was obtained. The Ta doped film was orientated only to (002) of VO2 structure measured by X-ray Diffraction (XRD). The valence of vanadium and doped Ta in the film was ＋4 confirmed by X Ray Photoelectron Spectroscopy(XPS), it means that the doped Ta was substitution atom. The results of resistance-temperature testing showed that the phase transition temperature was decreased from 68 ℃to 48 ℃. The reasons would be as following: With the atomic s