真空蒸发法制备CdS薄膜及其性能研究-JournalofNortheastern.PDF

第30 卷第3期 东 北 大 学 学 报 ( 自 然 科 学 版 ) Vol30, No. 3 200 9 年 3 月 Journal of Northeastern U niversity( Natural cience) Mar. 2 0 0 9 CdS 单玉桥, 党 鹏, 于晓中, 单连中 ( , 110004) : Cd , X - , Cd , Cd (002) ; 70% ; ; 50 E g 2. 41eV; 200 Cd , , , ; 50 200 255 cm : Cd ; ; ; : TM 341 : A : 1005-3026( 2009) 03-0392-04 Preparation of CdS Thin Films by Vacuum Evaporation and Their Properties SHA N Yu-qiao, DA N G Pe ng , Y U X iao-z hong , SHA N L ian-z hong ( Key Laboratory for Anisotropy and Texture of Materials ( Ministry of Education ) , Northeastern University, henyang 110004, China. Correspondent: DANG Peng, E-mail: dpengg @ yahoo. cn) Abstract: Cd thin film w as prepared by vacuum evaporation and its surface morphology , structure and photoelectric properties w ere tested and analyzed w ith scanning electron microscopy ( EM) , X-ray diffraction ( XRD) , UV-visible spectroscopy and four-point probe method. The results show ed that the Cd thin films deposited on the substrates at different temperatures are mainly of hexagonal phase w ith the crystal planes ( 002) in highly preferred orientation. The visible light transmittances of the films deposited on the substrates at different temperature are all over 70%, and the film resistance increases with increasing substrate temperature. The energy gap E g of the thin film deposited on the substrate at 50 is 2. 41 eV. After annealed at 200 , the thin film quality can be improved w ith crystallizability enhanced, resistance decreased and grain size increased, and the resistance of Cd films deposited on the substrate at 50 is 255 cm. Key words: Cd ; solar cell; thin film; vacuum evaporation 16 3