溅射法PST薄膜的诱导取向制备及介电性能研究-材料科学与工程专业论文.docxVIP

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溅射法PST薄膜的诱导取向制备及介电性能研究-材料科学与工程专业论文.docx

浙江大学硕士学位论文膜。 浙江大学硕士学位论文 膜。 提高溅射功率可以增加轰击靶材的Ar离子的能量,有更多的靶材粒子被轰击沉积 在基板上并堆积更为紧密,使PST薄膜的结晶性能得到改善,增加薄膜的晶相含量和 晶粒尺寸,降低体系中的缺陷密度,PST的电容值和可调性随之提高,介电损耗减小。 PT诱导层厚度能影响两步溅射PST薄膜的结晶性能,PST薄膜的结晶状况和可调 性随诱导层厚度的增加而下降,取向PST的析晶、可调性和优值均大大高于同等条件 F制备的非取向PST,其可调性和优值较非取向PST分别提高了近1倍和3倍,可调 性的最大值超过62,66%,并有望随着外加偏压的增大而继续提高。 关键词:PST,薄膜,诱导层,取向,介电性能 Il 浙江大学硕士学位论文Abstract 浙江大学硕士学位论文 Abstract Ferroelectric materials have promising application due to their excellent dielectric, piezoelectric,ferroelectric,pyroelectric and nonlinear polarization properties.The propeay that their polarization have a nonlinear transformation under the external electric field Can be used for fabricate microwave tunable devices such as phase shifters,oscillators,filters and delay lines etc.As far as microwave tunable dielectric materials,barium strontium titanate(BST)and its family have been investigated intensively.Recently,Cross et a1.found that lead strontium titanate(PST)ceramic has larger tunability and lower loss,It is favorable tO be used in microwave tunable devices.Compared with BST materials,especially in thin films,PST has smaller ferroelectric critical size,lower crystallization temperature,only one phase transition and compatible with Si micro—electronics technology.Moreover,it is important to promote the development of the miniaturization and integration for the modem devices.At present there are only a few research on the PST materials,especially on the thin films,and the property of the thin film is far away to the expectation.Much work should be done for the improvement ofPST thin film’S performance. This thesis reviewed the development of the microwave tunable ferroelectric thin film materials,summarized the research methods for improve the film property,and introduced the principle and application of the microwave tunability in brief,showed a new way to prepare oriented PST thin films by sol—gel combining with rf(radio frequency)magnetron sputtering techniques. Oriented PT thin films were prepared on 1TO g

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