LM5111-2MYNOPB;LM5111-1MYNOPB;LM5111-4MYNOPB;LM5111-1MNOPB;LM5111-2MNOPB;中文规格书,Datasheet资料.pdfVIP

LM5111 LM5111 Dual 5A Compound Gate Driver Literature Number: SNVS300F / Dual 5A Compound Gate Driver General Description ■ Independent inputs (TTL compatible) ■ Fast propagation times (25 ns typical) The LM5111 Dual Gate Driver replaces industry standard ■ Fast rise and fall times (14 ns/12 ns rise/fall with 2 nF load) gate drivers with improved peak output current and efficiency. Each “compound” output driver stage includes MOS and bipo- ■ Available in dual non-inverting, dual inverting and lar transistors operating in parallel that together sink more combination configurations than 5A peak from capacitive loads. Combining the unique ■ Supply rail under-voltage lockout protection (UVLO) characteristics of MOS and bipolar devices reduces drive cur- ■ LM5111-4 UVLO configured to drive PFET through rent variation with voltage and temperature. Under-voltage OUT_A and NFET through OUT_B lockout protection is also provided. The drivers can be oper- ■ Pin compatible with industry standard gate drivers ated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the Typical Applications SOIC-8 package or the thermally enhanced MSOP8-EP package. ■ Synchronous Rectifier Gate Drivers ■ Switch-mode Power Supply Gate Driver Features