硅纳米线的制备及其光学性质的研究-凝聚态物理专业论文.docxVIP

上海交通大学硕士学位论文摘要 上海交通大学硕士学位论文 摘要 万方数据 万方数据 在 SiNWs 中强的光陷效应和全方向减反特性结合光滑的表面可以作为一 个有力的工具来开发高效的基于硅纳米线的太阳电池。 最后，通过 RCWA 模拟我们进一步数值分析了 Si/a-Si:H CSNW 阵列 的光学性质，发现 CSNW 阵列与单独的 SiNW 阵列或硅薄膜相比能进一 步增强光吸收和光电流。同时我们指出这种吸收增强主要是由于 a-Si:H 高的吸收系数而导致的纳米线中的漏模共振吸收峰被放大。最后，我们得 出了 Si/a-Si:H CSNW 阵列光吸收的优化结构参数（材料填充率 f=0.5，纳 米线阵列周期 p=~600nm），这可以作为设计 CSNW 太阳电池的有意义指 导。 以上研究得到了科技部重大研究计划课题（2010CB933702）和国家 自然科学基金重点项目和的资助。特此感谢！ 关键词：硅纳米线阵列，双氧水，金属辅助的化学刻蚀，严格耦合波分析， 反射，吸收 III 上海交通大学硕士学位论文AB 上海交通大学硕士学位论文 ABSTRACT FABRICAION OF SILICON NANOWIRES AND THE OPTICAL PROPERTIES ABSTRACT Silicon nanowires (SiNWs) have received a great deal of attention recently, due to their unique optical, electronic, and thermal properties. Especially, the SiNW arrays have been proposed as a promising candidate for high-efficiency photovoltaic applications. In this thesis, we focus on the controllable growth of SiNW arrays with smooth surface via the metal-assisted chemical etching (MACE) technique, and also on both experimental and theoretical studies on the optical properties of the as-grown SiNW arrays by implementing the rigorous coupled-wave analysis (RCWA) approach. In addition, we have further numerically studied the optical properties of the crystalline Si/hydrogenated amorphous Si (a-Si:H) core/shell nanowire (CSNW) arrays via the RCWA simulation. To the best of our knowledge, in the SiNW arrays fabricated by MACE technique, it still remains to resolve a rather rough surface problem which can cause a high surface recombination velocity and thereby extremely limit the performance of NW photovoltaic devices. In the present work, we firstly show the realization of well-ordered SiNW arrays of smooth surface, fabricated by the MACE. It is found that the key success in the synthesis of high quality SiNW arrays lies in a better understanding of the role of H2O2 in IV MACE. From our growth investigation at various H2O2 concentrations with aids of TEM and photoluminescence measurements, we have observed that H