铯分子饱和吸收谱的半导体激光器稳频.pdf

37 　5 　　　 Vol.37, No.5 2010 5 CHINESE JOURNAL OF LASERS May, 2010 　　:0258-7025(2010)05-1182-04 铯分子饱和吸收谱的半导体激光器稳频 孟腾飞　武跃龙　姬中华　武寄洲　赵延霆　贾锁堂 (, 030006) 1 + 1 　780 nm X ΢ ※B Π , g u 87 Rb 5S (F=2)※5P (F′=2)。 1/2 3/2 5 , “R5”780 nm 。 800 s 1.5 MHz, 780 nm 。, 1560 nm 。 　;;;; 　TN248.4　　　　A 　　　doi:10.3788/CJ1182 Frequency Stabilized Diode L aser Based on Cesium Molecular Saturated Absorption Spectroscopy Meng Tengfei　Wu Yuelong　Ji Zhonghua　Wu Jizhou　Zhao Yanting　Jia Suotang (S tateKey Laboratory of Quantum Optics and Quantum Optics Devices, College of Physics andElectronic Engineering, Shanxi University, aiyuan, Shanxi 030006, China) Abstract　One art of the saturated absor tion s ectrosco y on cesium molecules near 780 nm at the absor tion band 1 + 1 X ΢※B Π is obtained.The osition of cesium molecular saturated absor tion s ectrosco y can be determined by g u 5S (F=2)※5P (F′=2)resonance line of the saturated absor tion s ectrosco y on 87 Rb atom.The five 1/2 3/2 absor tion eaks of the saturated absor tion s ectrosco y are observed.The 780 nm diode laser is stabilized to the “R5” absor tion eak.The frequency stability of thelaser is better than 1.5 MHz in 800 s.It offers a new method to stabilize the 780 nm diode laser frequency by the saturated absor tion eak of cesium molecules.This laser can be used to roduce the ultracold ground state cesium molecules, and can be used as the frequency-doubled reference of o tical communication range in 1560 nm. Key words　laser o