SiC单晶片加工过程中切割力的分析与建模.pdfVIP

第 51 卷第 23 期 机 械 工 程 学 报 Vol.51 No.23 2015 年 12 月 JOURNAL OF MECHANICAL ENGINEERING Dec. 2 0 1 5 DOI ：10.3901/JME.2015.23.189 SiC 单晶片加工过程中切割力的分析与建模* 李淑娟 刘 永 侯晓莉 高新勤 (西安理工大学机械与精密仪器工程学院 西安 710048) 摘要：SiC 单晶具有优良的物理和机械性能，在微电子和光电领域得到了广泛应用，然而由于其高硬度和脆性，晶片的制造 非常困难、效率低下。为提高 SiC 单晶片的加工质量和加工效率，分析了 SiC 单晶片线锯切割过程中的受力情况；从切屑变 形和摩擦两个方面，建立单颗磨粒的法向和切向受力模型，进而得到线锯切割力与工艺参数及线锯物理属性的关系模型；设 计了切割力的试验装置，通过不同加工参数下的试验研究，确定了关系模型中的应力系数；通过理论值与试验值的对比校验， 法向力和切向力预测值的误差小于 9.18%，并对误差产生原因作了分析。结果表明，该切割力理论模型可以对 SiC 单晶片在 同等线锯切割环境下的切割力进行有效预测，为切削力的优化控制提供了理论依据。 关键词：SiC 单晶片；线锯切割；切割力；分析与建模 中图分类号：TG663 Analysis and Modeling Cutting Force for SiC Monocrystal Wafer Processing LI Shujuan LIU Yong HOU Xiaoli GAO Xinqin (School of Mechanical and Precision Instrument Engineering, Xi’an University of Technology, Xi’an 710048) Abstract ：Having an excellent physical and mechanical property, silicon carbide (SiC) monocrystal is used extensively in the field of microelectronics and optoelectronics. However, the high hardness and brittleness make the SiC wafer processing difficult and inefficient. In order to improve the surface quality and processing efficiency of SiC wafer, cutting force of wire saw is developed during the wafer processing. From the view of chip deformation and friction, the models of normal force and tangential force are established for single abrasive, and a theoretical model from the cutting force and process parameters and physical attributes of wire saw is obtained. The cutting force experiments are set up, and then the coefficients of the model are determined under different process parameters. Compared with the experimental results, the average errors