脉冲激光液相烧蚀法制备硅纳米晶及其发光性能的研究-材料学专业毕业论文.docxVIP

摘 摘 要 本文研究了脉冲激光液相烧蚀法制备硅纳米晶，不同靶材，不同激光参数对 硅纳米晶形貌、结构的影响，对合成理论和工艺进行了研究；并研究硅纳米晶尺 寸形貌、成分、结构和表面态对光致发光性能的影响，主要内容如下： (1)用脉冲激光烧蚀硅片制备硅纳米晶，该纳米晶的尺寸在5rim以下，并 随着激光脉宽的增加尺寸不断增大。对其结构进行分析，发现硅纳米晶具有面心 立方的结构，而不是常见的金刚石结构。研究了硅纳米晶的发光性能以及随在空 气中放置的时间延长发光强度的变化，通过对其带隙和表面态的研究，发现硅纳 米晶能够发光是量子限制效应和表面态共同作用的结果。 (2)用脉冲激光烧蚀硅粉制备的硅纳米晶，随着激光脉宽的增加，获得的 纳米晶的尺寸也不断增加。与使用硅片做原料不同，使用硅粉得到的硅纳米晶为 常见的金刚石结构。这种纳米晶在可见光区有很强的发光，发光曲线用高斯拟合 分为两个峰，理论分析认为，这两个发光峰分别是量子限制效应及表面态作用的 结果。发光峰随着激光脉宽的增加而红移。 (3)用脉冲激光烧蚀一氧化硅粉，制备出圆片状的纳米晶，直径分布从lOnm 到200nm，厚度为纳米级。物相分析表明这种独特形貌的纳米晶具有金刚石结构。 结合形貌和表面态分析，认为这种圆片状硅晶的生长是由氧化和扩散机制共同作 用的结果。这种片状的硅纳米晶在可见光区有强的发光。 关键词： 硅纳米晶脉冲激光烧蚀光致发光性能形核长大 AB AB STRACT In this thesis，Si nanocrystals(Si—ncs)with different morphologies and s仃uctures were obtained by pulsed laser ablation using different target materials and laser parameters．This work investigates the theory and process of the formation of Si—ncs， and clarifies the influence of the size，composition，s廿ucture and surface states of Si—ncs on the photoluminescence(PL)properties．The main conclusions are as below： (1) Nonagglomerated Si-ncs were synthesized by the ablation of microsecond-pulse laser on Si wafer in water．The mean size of Si—ncs was calculated under 5nm,and the size increases with the laser width．In this case，Si—ncs have the fec s锄cture ratllelthan the diamond structure．It was found that the luminescence is attributed to the quantum confinement effct and surface states． (2)Si—ncs were perpared by using Si powder as target．The mean size of the Si—ncs increases along with the laser width．Unlike the fee—Si obtained from Si wafer, here the Si-ncs shows diamond sⅡuctIlIIe．Visible light emissions were detected from the suspension of Si—ncs．The luminescence is attributed to the quantum confinement effect and surface state，and the peaks show redshift with the increase of the laser width． (3)Disk—like Si-ncs were synthesized by the phase separation of SiO under laser ablation．The formations of disk·like Si—ncs are attributed to the oxide assisted growth of Si