脉冲激光沉积工艺对CIGS薄膜成分和微结构的影响-物理学专业毕业论文.docxVIP

脉冲激光沉积工艺对CIGS薄膜成分和微结构的影响摘要 脉冲激光沉积工艺对CIGS薄膜成分和微结构的影响 摘要 采用PLD溅射法在玻璃衬底上制备不同叠层顺序、不同比例的In／Cu．Ga 矛llCu．Ga／In预制膜，后经硒化、退火处理，得至IJCIGS薄膜．采用X射线衍射仪 (XRD)表征了薄膜的晶体结构，采用扫描电子显微镜(SEM)和能量散射谱 (EDS)Xi见察和分析了薄膜的表面形貌和元素成分，采用光电子能谱(xPs)分析 了薄膜表面的化学价态，采用紫外一可见分光光度计分析了薄膜的光吸收特 性． 实验发现，采用Cu．Ga／In的预制膜叠层顺序制备出的CIGS薄膜，其In 元素损失严重．采用In／Cu．Ga的预制膜叠层顺序制备的CIGS薄膜，随着预制 膜中In含量的增加，其CIGS薄膜表面的孔隙密度会增加，且由于采用单质In 靶，导致CIGS薄膜表面有大颗粒产生． 采用In／Cu．Ga的叠层顺序，且溅射脉冲数为Cu．Ga靶5万；In靶6万的溅 射工艺下制备的Cu．In．Ga预制膜，后经硒化、退火处理，可得到沿(1 12)晶向 择优取向生长，且致密、均匀、结晶良好的CIGS薄膜，其组分配比也处于理 想范围之内，且对可见光有较高的吸收效率，适合做太阳电池的高效吸收层 材料． 关键词：PLD，Cu．In．Ga预制膜，CIGS薄膜，硒化 内蒙卉大学硕士毕ql，论文INFLUENCE 内蒙卉大学硕士毕ql，论文 INFLUENCE OF PLD PROCESS 0N COMPOSITIoN AND MICROSTRUCTURES oF ClGS THIN FILMS ABSTACT The In／Cu．-Ga and Cu··Ga／In precursor films with different lamination modes and different content ratios were prepared on glass substrates by PLD sputtering．Then，the CIGS films can be obtained by selenization and annealing． The CIGS films were characterized with X—ray diffractometry(XRD)，scanning electron microscopy(SEM)，X-ray energy-dispersive spectroscopy(EDS)and X．ray photoelectron spectroscopy(XPS)to evaluate the influence of lamination modes on the crystal-structures，surface morphologies，composition and valence state． It was found that the content of In seriously lossed in the CIGS thin films prepared by Cu-GaJln precursor film with different lamination modes．The pore density of CIGS film surface will increase with increasing the content of In and large grains will generate in the surface of CIGS thin films． The Cu—In-Ga precursor film with the lamination mode as In／Cu-Ga was prepared to obtain the CIGS thin films with a(1 1 2)oriented mostly，especially in 内蒙卉大学硕士牛、№论文the 内蒙卉大学硕士牛、№论文 the case that the spuaefing pulse number was 60 thousand for Indium and 5 0 thousand for Cu-Ga，respectively．Through analysis，it is proved that the CIGS thin film has a high absorptivity to the visible light and can be used as a high efficiency absorption layer for solar cells． Key words：PLD，Cu-In