射频溅射法制备透明导电陶瓷薄膜-微电子学与固体电子学专业毕业论文.docxVIP

中文摘要本文首先回顾了透明导电薄膜的发展历程，指出ZAO(氧化锌铝)薄膜是新一 中文摘要 本文首先回顾了透明导电薄膜的发展历程，指出ZAO(氧化锌铝)薄膜是新一 代透明导电薄膜，并讨论其性能优点及～般制备方法。在此基础上本课题利用射 频磁控溅射的方法制备ZAO薄膜。 在研究的开始，首先对用于溅射的ZAO靶材进行了制备，并成功地烧制出 ZAO靶材，积累了一定经验。靶材烧结温度为1300℃。升温过程中，在600℃ 处保温两小时．在测试中，使用SEM和XRD考察ZAO靶材的性能。在研制靶材 的过程中，合理地制定升温曲线，对于靶材烧结的好坏有重要作用。 研究中利用自制的ZAO靶材进行了射频溅射，在玻璃基体上制备出了ZAO 透明导电陶瓷薄膜。实验中分别探索了氩气压强、基体温度、溅射时间、溅射功 率、退火温度这五个工艺条件对ZAO薄膜性能的影响。对制得的样品进行了方 阻、可见光透过率的测试，并使用AFM、XRD对样品进行的表面形貌测试和结 晶测试。 实验中发现溅射时间和溅射功率的增加有助于降低ZAO薄膜的方阻，同时 对薄膜的透过率也有一定影响。提高基体温度和退火温度都有助于降低ZAO薄 膜的方阻，其中提高基体温度对于降低薄膜方阻，更为有效，但当基体温度和退 火温度较高时，ZAO薄膜透光率会下降。氩气压强为0．75Pa下制备的ZAO薄 膜方阻最低，随着氩气压强的提高，ZAO薄膜的可见光透过率提高。 当基体温度为450℃时，ZAO薄膜出现颗粒减小、晶粒长大的现象。文中解 释了这种现象对ZAO薄膜方阻影响的机理。 ZAO薄膜样品的可见光平均透过率大都基本上在80％以上，最高可达达到 88．58％。ZAO薄膜的方阻最高可达到8．915 Q／El。 关键词：ZAO薄膜ZAO靶材射频磁控溅射透明导电 ABSTRACTThis ABSTRACT This paper first reviewed the course of transparent conductive thin film development，points out that the ZAO thin film is the new generation of transparent conductive也in film,and discusses its advantage and the general preparation method． In this foundation,ZAO thin film is prepared by I疆magnetron sputtering in this research． In the beginning of the research，the preparation of ZAO target which is used in RF magnetron sputtering is explored．m ZAO target is sintered at 1 300C．In elevation of temperature process，the temperature is maintained in 600‘C．The SEM and XRD is used for observing the ZAO target．In research it finds that the curve of the elevation of temperature is important to the preparation of the ZAO． The ZAO target which is prepared by ourselves is used for RF magnetron sputtering in this research．The RF magnetron sputtering is employed to despite the ZAO film in glass．The RF magnetron sputtering parameter which includes sputtering time，spuRering power,the pressure of Ar gas and temperature of substrate is also explored．The samples of the ZAO thin film have been carried on sheet resistance and the visible light transmissibility test．AFM and XRD is also used in test． In the research，it finds that inc