透射电子显微镜成像原理.pptVIP

透射电子显微镜的成像原理 ;透射电镜像;2、衍射衬度像;晶体中的取向：多晶、析出物、缺欠;二、衍衬像：明场像与暗场像;明场像的成像;暗场像的成像; 暗场像的成像; 暗场像的成像;衍射衬度理论;衍射衬度理论;三、完整晶体中衍衬像运动学理论;;柱体近似模型;三、完整晶体中衍衬像运动学理论; 完整晶体衍射强度;;;;;;等厚条纹;等厚条纹 （s=常数，t变化）;等厚条纹 （s=常数，t变化）;等厚条纹 （s=常数，t变化）;等厚条纹 （s=常数，t变化）;等倾干涉 （ t =常数， s 变化）;四、不完整晶体中衍衬像运动学理论;四、不完整晶体中衍衬像运动学理论;;;位错衍衬像;Dislocations in Ni-base superalloy The micrograph shows the dislocation structure following creep, with dislocations looping around the particles ;;Fig.?10.?The area containing thin Zr–C particles and tiny Zr-rich particles in the annealed specimen after creep test at 600?°C (100?MPa, 9160?h, total deformation 0.71%). Zone axis diffraction pattern of both matrix and thin plate-like Zr–C particles in the insert. Two matrix reflection vectors (D03 structure) are marked by arrows. ;Fig. 1.?(a) Selected area 140?nm diameter of image containing single S phase particle; (b) SAED pattern from the selected area; (c) fast Fourier transform of the image intensity in (d), the HRTEM image of the embedded particle in (a); (e) microdiffraction pattern of the precipitate and surrounding matrix. ;Fig. 2.?TEM micrographs and corresponding diffraction patterns of the AA2324 alloy in the WQ-270 condition: (a) bright field; (b) [0?0?1]Al SAD pattern of the S phase precipitate in dark contrast in (a) with surrounding matrix (the streaks emanating from the brighter Al spots are an artefact due to camera saturation); (c) simulated SAD pattern corresponding to (OR1). The rectangle corresponds to the range of (b). ;位错运动的动态电子显微镜观察;;;多相合金的衍射和衬度效应;;;;;;;;;;;图3.66 Moiré 条纹形成原理图