Flipchip工艺流程英文课件.ppt

Flip Chip;1.Metal bump 金屬凸塊-C4 process(IBM) 2. Tape-Automated bonding 捲帶接合-ACF process 3. Anisotropic conductive adhesives 異方向性導電膠 -ACP process 4.Polymer bump 高分子凸塊 - C4 process 5.Stud bump. 打線成球 - ACP process(Matsushita); Kingbond Training Course; Kingbond Training Course; Kingbond Training Course;C4: Controlled Collapse Chip Connection Process;ACP: Anisotropic Conductive Paste Process;ACF: Anisotropic Conductive Film Process;Overcoat with polymide and open the bump areas.Pattern wettable base metal;FCT Bump Structure;1. 蒸鍍 Evaporation 2. 濺鍍 Sputter 3. 電鍍 Electroplating 4. 印刷 Printed solder paste bump 5. 錫球焊接 Solder ball bumping or Stud bump bonding (SBB) 6.無電鍍鎳 Electroless nickel technologies;1.95Sn/5Pb,97Sn/3Pb 高溫錫鉛合金 2. 63Sn/37Pb 低溫錫鉛合金 3. Ni 鎳 4. Au 金 5.Cu 銅;Silicon Wafer arrives with an aluminum based final metal pad and die passivation. Wafer can be probed prior to bumping.;The Under Bump Metallurgy is added by FCT through sputtered layers of Al,Ni-V,Cu;UBM consist 3 layer: 1. Adhesion layer : Ti,Cr,TiW 提供鋁墊(Al pad)與護層(Passivation layer)有較強之黏著性 2. Wetting layer:Ni,Cu,Mo,Pt 高溫迴焊時錫球可完全沾附而成球 3. Protective layer:Au 保護 Ni,Cu等免於被氧化.;Apply photoresist, Pattern and develop ;Etch to form UBM cap;Deposit solder paste and reflow to form bump;Sample measure bump height, bump shear and bump resistance.;1. Evaporative bumps are 125 mils in diameter and 100 mils high. 2. Plated bumps are 125 - 175 mils in diameter and 25 -100 mils high.;製程名稱:;Process:;晶片切割 Die Saw;上晶片 Flip Chip;上晶片流程 Flip Chip flow;上晶片流程 Flip Chip flow;填膠 Under-fill; ;填膠製程 Under-fill;填膠製程 Under-fill; ; ;Evaporative solder bumping process;Electroplated UBM w/ solder bumping process