电子科学和技术专业英语资料.docxVIP

电子科学与技术专业英语复习资料 一，单词翻译（20 分） 晶体生长 crystal-growth 混合电路 hybrid circuit 异质结 heterojunction 集电结 collector junction 发射结 emitter junction 基区 base region 肖特基接触 schottky contact 复合 recombination 固相扩散 Solid phase diffusion 多晶硅 polycrystalline 微波器件 microwave devices 损耗 depletion 漏电流 leakage current 多数载流子 majority - carrier 少数载流子 minority - carrier 封装 package 电阻 resistance 电流 current 电流密度 current density 电压 voltage 输入端 input port 输出端 output port 近红外 near-infrared 紫外 ultraviolet 传输模式 transport form 饱和电流 saturation currents 光学吸收 optical absorption 受激辐射 stimulated emission 自发辐射 spontaneous emission 二、阅读理解（20 分） 三、段落翻译（40 分） 1、The unfolding story of solid-state electronics can be told rather completely in terms of evolving fabrication technology, constantly expanding the number of options available to the device and integrated-circuit designer. It was for technological reasons that an early and important kind of BJT was a germanium PNP device. The term PNP labels the conductivity types of the three regions within a BJT, regions separated by two PN junctions. In later years, and again partly for technological reasons, the dominant BJT was a silicon NPN device. In integrated circuits today, the combination of silicon NPN and PNP devices is a growing practice because the resulting complementary circuits have important power-dissipation and performance advantages. For convenience and consistency, however, and because of its continuing importance, the silicon NPN BJT will be the vehicle for this chapter. 根据制备技术的进化，给器件和集成电路设计者的可用选择数不断扩展，使得固态电子学的演变故事可以描述得更为完整。由于技术原因，早期重要的晶体管是锗 PNP 器件，PNP 型晶体管的导电区有三个区，这些区被两个 PN 结分开。在随后的几年，又由于部分技术的原因，占优势的晶体管是硅 NPN 器件。在集成电路的今天，硅 NPN 和 PNP 器件的组合成为常用的形式，因为有效互补电路具有重要的功耗和性能优势。然而，为了方便和一致性， 以及因为连续性的重要性，NPN 型硅晶体管将是在这章的主要讨论内容。 2 、 The essential structure of a BJT is represented in Figure 2-1 (a). The very earliest such devices had structures literally of this kind. Two closely spaced junctions were created by crystal-growth methods, and a “bar” or parallelepiped