双频容性耦合等离子体物理特性的研究.ppt

DF-CCP装置 2、苏州大学 DF-CCP放电装置及诊断系统的研制 高频：60MHz 低频：2MHz、13.6MHz 完成人：辛煜、宁兆元等 目前已开展双频条件下的实验诊断研究，如测量 双频条件下的等离子体密度、电子能量分布的测 量。 双频容性耦合等离子体装置 苏州大学 HF: 50W E (eV) 高频 ( 60 MHz )放电情况下电子的能量分布 E (eV) Pressure: 2Pa 辛煜等（苏州大学） 实验结果显示：EEDF为三温、单温分布等 PIC/MC模拟结果 模拟结果也显示：EEDF为单温分布 60MHz/13.56MHz条件下的电子密度 下一步工作计划是： 1）系统研究双频条件下的Ar等离子体状态参数的量,主 要是观察双频的调制效应； 2）研究反应性气体或混合气体 (如Ar/CF4 )的在双频条 件下的放电行为； 3）低频调制下离子入射到基片上的能量分布。 4）合作开展数值模拟与实验测试比较的研究工作。 Thanks for your attention! e0 e1 qr 离子在鞘层中与中性粒子的碰撞 ? 弹性碰撞 ? 电荷交换碰撞 One-dimensional model When the chamber radius R is far larger than the distance d between two electrodes, we can use the 1D model to simulate the discharge, i.e., Rd. x=0 x=d LF HF Influence of HF-power frequency on plasma density P = 100mTorr, Vh = 200V, Vl =400V fl = 2MHz, fh = 20, 30, 60MHz, P=50 mTorr, Vh=50 V, Vl=100V, fh =60 MHz, fl=2,5, 10, 13.56 MHz Influence of LF-power frequency on plasma density P = 100mTorr, Vh = 200V, Vl =400V fl = 2MHz, fh = 20, 30, 60MHz, Influence of HF-power frequency on sheath voltage drop 平均鞘层电位降： 与解析模型的比较 fh = 30MHz, P =50mTorr, Vh = 200V, Vl = 400V fl = 2MHz P = 100mTorr, Vh = 200V, Vl = 400V 离子入射到电极上的能量分布 HF power LF power H 2R D Schematic diagram of DF-CCP H= 2.45cm 2R=43.18cm D=6.35cm Two-dimensional model I. Influence of high frequency fH ? averaged electron density: 27MHz 40MHz 60MHz VHF=50V, VLF=100V, fL =2 MHz, p=100 mTorr The electron density increases significantly as increasing values of fL. ? averaged electron temperature: 27MHz 40MHz 60MHz VHF=50V, VLF=100V, fL =2 MHz, p=100 mTorr The electron density increases slightly as increasing values of fL. II. influence of low frequency 12MHz With the increase of low frequency, two sources become from decoupling to coupling, and the electron density increases significantly when two sources coupling. 2MHz 6MHz ? averaged electron density: VHF=50V, VLF=100V, fH =60 MHz, p=100 mTorr ? Averaged electron temperature: 2MHz With th