硅行业专业术语.docVIP

Acceptor-Anelement,suchasboron,indium,andgalliumusedtocreateafreeholeinasemiconductor.Theacceptoratomsarerequiredtohaveonelessvalenceelectronthanthesemiconductor.受主-一种用来在半导体中形成空穴的元素，比如硼、铟和镓。受主原子必须比半导体元素少一价电子AlignmentPrecision-Displacementofpatternsthatoccursduringthephotolithographyprocess.套准精度-在光刻工艺中转移图形的精度。Anisotropic-Aprocessofetchingthathasverylittleornoundercutting各向异性-在蚀刻过程中，只做少量或不做侧向凹刻。AreaContamination-Anyforeignparticlesormaterialthatarefoundonthesurfaceofawafer.Thisisviewedasdiscoloredorsmudged,anditistheres*不良词语*tofstains,fingerprints,waterspots,etc.沾污区域-任何在晶圆片表面的外来粒子或物质。由沾污、手印和水滴产生的污染。Azimuth,inEllipsometry-Theanglemeasuredbetweentheplaneofincidenceandthemajoraxisoftheellipse.椭圆方位角-测量入射面和主晶轴之间的角度。Backside-Thebottomsurfaceofasiliconwafer.(Note:Thistermisnotpreferred;instead,use‘backsurface’.)背面-晶圆片的底部表面。（注：不推荐该术语，建议使用“背部表面”）BaseSiliconLayer-Thesiliconwaferthatislocatedunderneaththeins*不良词语*atorlayer,whichsupportsthesiliconfilmontopofthewafer.底部硅层-在绝缘层下部的晶圆片，是顶部硅层的基础。Bipolar-Transistorsthatareabletousebothholesandelectronsaschargecarriers.双极晶体管-能够采用空穴和电子传导电荷的晶体管。BondedWafers-Twosiliconwafersthathavebeenbondedtogetherbysilicondioxide,whichactsasanins*不良词语*atinglayer.绑定晶圆片-两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。BondingInterface-Theareawherethebondingoftwowafersoccurs.绑定面-两个晶圆片结合的接触区。BuriedLayer-Apathoflowresistanceforacurrentmovinginadevice.Manyofthesedopantsareantimonyandarsenic.埋层-为了电路电流流动而形成的低电阻路径，搀杂剂是锑和砷。BuriedOxideLayer(BOX)-Thelayerthatins*不良词语*atesbetweenthetwowafers.氧化埋层(BOX)-在两个晶圆片间的绝缘层。Carrier-Valenceholesandconductionelectronsthatarecapableofcarryingachargethroughasolidsurfaceinasiliconwafer.载流子-晶圆片中用来传导电流的空穴或电子。Chemical-MechanicalPolish(CMP)-Aprocessofflatteningandpolishingwafersthatutilizesbothchemicalremovalandmechanicalbuffing.Itisusedduringthefabricationprocess.化学-机械抛光(CMP)-平整和抛光晶圆片的工艺，采用化学移除和机械抛光两种方式。此工艺在前道工艺中使用。ChuckMark-Amarkfoundoneithersurfaceofawafer,causedbyeitheraroboticendeffector,achuck,orawand.卡盘痕迹-在晶圆片任