IC工艺技术3--刻蚀教学提纲.pptVIP

Plasma etch mechanism (等离子刻蚀机理) Plasma etch mechanism CF4 etch Chemical reaction (CF4刻蚀化学反应) Plasma etch mechanism (等离子刻蚀机理) ) Plasma etch mechanism (等离子刻蚀机理) Few notes in CF4 plasma etch The plasma contains energetic ions which bombard the wafer surface, as well as other surface in the reactor chamber. They are accelerated across the voltage drop region at the surface, and collide with it at high speed.. This ion bombardment is also causes anodization wear. During the silicon etch, the most prevalent chemical reaction proceeds as follows: 4F* + Si --- SiF4