bjt双极型晶体管.pptVIP

* Slide 8-* In general, both VBE and VBC are present : In saturation, the BC junction becomes forward-biased, too. VBC causes a lot of holes to be injected into the collector. This uses up much of IB. As a result, IC drops. VCE (V) 8.6 Ebers-Moll Model Modern Semiconductor Devices for Integrated Circuits (C. Hu) Slide 8-* 8.7 Transit Time and Charge Storage When the BE junction is forward-biased, excess holes are stored in the emitter, the base, and even in the depletion layers. QF is all the stored excess hole charge tF determines the high-frequency limit of BJT operation. tF is diffi