Buck 电路结构详解(Analog Devices培训资料).ppt

* * The error amplifier is in an inverting configuration. Since it has a capacitor between its inverting input and output, it acts like an integrator i.e. it has a pole at zero frequency. * The error amplifier is in an inverting configuration. Since it has a capacitor between its inverting input and output, it acts like an integrator i.e. it has a pole at zero frequency. * * What this means is that when the input voltage is significantly larger than the peak voltage, a small change in the control volatge wrt to peka volatage can mean large swings in the output voltage. * * * * * * * * * * * * * * The primary concern when selecting a MOSFET is how hot it will get. Will it be thermally stable? How much will it degrade efficiency? These are obviously all basically the same questions that we will answer in the subsequent slides. Just pick any FET out there with the appropriate BVdss. After going through the process a couple of times, you’ll start to have an intuition about what might and might not work. This may be like guessing and checking rather than a scientific process, but it can be instructive to be wrong a few times to give you an understanding of how various parameters effect loss. * From the Slide: Threshold Voltage Vgs(th) Minimum gate bias which enables the formation of the channel between source and drain Decreases with temperature On resistance Rds(on) Total resistance between source and drain during on state Important parameter in determining current rating and power dissipation Increases with temperature due to hole and electron mobility decreasing with temperature Decreases with Increased gate to source voltage Rds(on) has Positive Temp Coefficient (0.7%/C – 1%/C) Ideal for parallel operation Parallel MOSFETs tend to share current evenly (unlike diodes) Drain-Source Breakdown Voltage BVdss Maximum drain to source voltage device can endure without avalanche breakdown in off state. * When the FET is conducting it will be in series with a