低压CMOS带隙基准设计.doc

中文题目：低电压CMOS带隙基准设计 外文题目: THE DESIGN OF LOW VOLTAGE CMOS BANDGAP REFERENCE 毕业设计（论文）共 63 页（其中：外文文献及译文20页） 图纸共0张 完成日期 2008年06月 答辩日期 2008年06月 PAGE II PAGE I 摘要 基准参考源是集成电路中一个重要的单元模块，广泛应用于各种模拟集成电路、数模混合信号集成电路和片上系统（System on Chip简称SoC）芯片中。这种基准源与电源，工艺参数和温度的关系很小，但它的温度稳定性以及抗噪性能影响着整个电路系统的性能，随着集成电路产业的发展和半导体制造工艺技术的进步，深亚微米标准CMOS工艺将成为SoC集成电路设计的主流。因此本论文基于chartered 0.35um标准CMOS工艺技术，设计低压CMOS带隙基准参考源具有一定典型性和代表性。 本文首先介绍了基准电压源的背景知识，如基准源的发展历史、性能指标和分类等；接下来分析带隙基准源的基本原理和基本结构；最后根据现实需要设计出有代表性的适用于低电源电压工作的带隙基准源电路；在本设计应用Hspice仿真工具对本文中设计的带隙基准源电路的温度特性、在电源电压变化范围内的输出电压、电路功耗及电源抑制比（Power Supply Rejection Ratio简称PSRR）等进行了模拟仿真并对结果给与分析。 模拟和仿真结果表明，本文中电路有良好的温度特性和低电源电压工作能力，在-20到100温度范围内，基准电压温度系数很小；电路的最低电源工作电压可为1V，在10Hz到50KHz频率范围内平均电源抑制比约为-75dB。 关键词：带隙基准；电源抑制比；温度系数 Abstract Reference is an important module in the integrated circuits and widely used in various analog ICs, digital-analog mixed signal ICs and SoC. It has little to do with the power, process parameter and temperature and so on. But its temperature stability and anti-noise capability influence the precision and performance of the whole system. With the development of IC industry and the progress of manufacture technique of semiconductor, deep sub-micron standard digital CMOS process technology will be the main stream of SoC IC design .So it is a representative to design a low voltage CMOS bandgap reference with the chartered 0.35um standard CMOS process technique in this thesis. Firstly in this paper, some knowledge of background about the voltage reference, such as the development of voltage reference, performance index of the voltage reference, classify and so on, The next, the principle and structure for voltage reference has been analyzed. In the end, the typical voltage bandgap circuit used in low power supply is proposed. And In this paper, I use Hspice simulation tool to simulate some parameter presented in circuit such as the temperature characteristic, the output voltage proportional to the variable power inputs, the dissipation