周期性梯度富硅SiN_x薄膜的微结构与发光特性.docxVIP

周期性梯度富硅 SiNx 薄膜的微结构与发光特性陈小波 1 周期性梯度富硅 SiNx 薄膜的微结构与发光特性 陈小波 1, 2, 杨 雯 1, 段良飞 1, 张力元 1, 杨培志 1 (1. 云南师范大学 太阳能研究所, 可再生能源材料先进技术与制备教育部重点实验室, 昆明 650092; 2. 四川文理 学院 物理与机电工程学院, 达州 635000) 摘 要: 采用磁控共溅射结合快速光热退火技术在单晶硅和石英衬底上制备了含硅量子点的周期性梯度富硅 SiNx 薄膜(梯度薄膜)和单层富硅 SiNx 薄膜(单层薄膜)。采用 Raman 光谱、掠入射 X 射线衍射(GIXRD)、透射电子显微 镜(TEM)、傅里叶变换红外(FTIR)光谱和光致发光(PL)光谱分析了薄膜的结构特性、键合特性和发光特性。Raman 光谱、GIXRD 和 TEM 结果表明, 梯度薄膜和单层薄膜中的硅量子点晶化率分别为 41.7%和 39.2%; 梯度薄膜的硅 量子点密度是单层薄膜的 5.4 倍。FTIR 光谱结果显示两种薄膜均为富硅氮化硅薄膜, 梯度薄膜的硅含量小于单层 薄膜。PL 光谱结果表明梯度薄膜中的辐射复合缺陷少于单层薄膜。 关 键 词: Si 量子点; 氮化硅薄膜; 快速光热退火; 光致发光 中图分类号: O484 文献标识码: A Microstructure and Luminous Property of Periodical Gradient Si-rich SiNx Thin Films CHEN Xiao-Bo1, 2, YANG Wen1, DUAN Liang-Fei1, ZHANG Li-Yuan1, YANG Pei-Zhi1 (1. Key Laboratory of Education Ministry for Advance Technique and Preparation of Renewable Energy Materials, Institute of Solar Energy, Yunnan Normal University, Kunming 650092, China; 2. School of Physics and Mech-tronic Engineering, Sichuan University of Arts and Science , Dazhou 635000, China) Abstract: Periodic gradient Si-rich SiNx (G-SRSN) thin films and single-layer Si-rich SiNx (S-SRSN) thin films were deposited on monocrystalline silicon wafers and quartz substrates by combination of magnetron co-sputtering and rapid photo-thermal annealing. Raman spectroscope, grazing incident X-ray diffraction (GIXRD), transmission electron microscope (TEM), Fourier transform infrared (FTIR) spectroscope and photoluminescence (PL) were used to analyze the structure, bonding configurations and luminescence of the films. Raman, GIXRD and TEM results show that the crystalline fractions of G-SRSN and S-SRSN thin films are 41.7% and 39.2%, respectively. Quantum dots density of G-SRSN thin film is 4.4 times higher than that of S-SRSN thin film. The FTIR spectra demonstrate that both G-SRSN and S-SRSN films are Si-rich SiNx, but Si content of the former is lower than that of the later. PL spectra suggest that the G-SRSN thin films possess a low