《ZnS薄膜的电致电阻效应研究修改版2》》-毕业论文（设计）.docVIP

PAGE 本科生毕业论文(设计) 题 目 ZnS薄膜的电致电阻效应研究 学生姓名 指导教师 学 院 材料科学与工程学院 专业班级 材料0904班 完成时间 2013年6月 摘要 随着经济和社会的飞速发展，人们对电子信息存储产品提出了更高的要求：高密度、高速度、低功耗、低成本等。基于阻变机制的阻变随机存储器在下一代非易失性存储器中有代替闪存的巨大潜力，引起了广泛关注。ZnS是一种组分简单、易于制备的阻变材料，具有广阔的应用前景。此外，目前还没有任何对于ZnS薄膜阻变特性的研究报道。而且对于硫化物阻变机理的研究不够清楚。因此，对于ZnS薄膜的阻变特性的研究具有重要意义。 实验通过磁控溅射的方法制备了ZnS薄膜，并通过XRD、FESEM和半导体参数仪对其晶体结构、表面形貌、电学特性进行了表征。为了探究ZnS薄膜的阻变机制，设计了两种存储器件结构，并用光刻技术制备。实验发现，基于ZnS薄膜的阻变存储器，在由OFF状态向ON状态转变的过程中，在两个电极对之间有导电通路的形成，并伴随着大量的热量放出。 关键字：阻变存储器（RRAM）;阻变机制；ZnS;光刻技术 Abstract With the rapid development of economy and society, electronic data storage products are required to possess more superior behaviors such as high density, high operation speed, low power consumption and cost. Resistive random access memory (RRAM) based on the resistive switching has attracted much attention due to its potential for the replacement of flash memory in next generation nonvolatile memory applications. ZnS is a promising resistive switching material for simple components and minimized requirements for deposition techniques. So far, the resistive switching of ZnS has not been reported. Moreover, the resistive switching mechanism of sulfide thin films is still not clear. Therefore, it is significant to investigate resistive switching properties of ZnS thin films. ZnS thin films were prepared by the magnetron sputtering. The crystal structure, surface topography, and electrical properties of as-grown films were examined by XRD, FESEM, and Keithley 4200 semiconductor parameter analyzer, respectively. To investigate the resistive switching mechanism of ZnS, two kinds of device structures were designed and fabricated by photolithography technique. It was found that during the OFF-to-ON transition process of ZnS-based memory devices, conductive paths are formed between the electrode pairs with an accompanying release of a large amount of heat. K