MEMSTHz滤波器的制作工艺.pdfVIP

MEMS THz 滤波器的制作工艺 郑英彬, 施志贵, 席仕伟, 赵 龙, 李 红, 赵兴海 ( 中国工程物 研究院 电子工程研究所, 四川 绵阳 62 1900) : 基于MEM S 技术制作了太赫兹 ( T Hz) 滤波器样品, 研究了制作滤波器的工艺流程方案, 其关键工艺技术包括硅深槽刻蚀技术深槽结构的表面金属化技术阳极键合和金- 硅共晶键合技 术采用4 m 的热氧化硅层作刻蚀掩膜, 成功完成了800 m 的深槽硅干法刻蚀; 采用基片倾斜放 置多次离子束溅射和电镀加厚的方法完成了深槽结构的表面金属化, 内部金属层厚度为3~ 5 m; 用硅- 玻璃阳极键合技术和金- 硅共晶键合技术实现了三层结构四面封闭的波导滤波器样 品加工测试结果表明, 研制的滤波器样品中心频率138 GH z, 带宽15 GH z, 插损小于3 dB : 微电子机械系统 ( M EM S) ; 滤波器; 太赫兹 ( T H z) ; 干法刻蚀; 键合 : T N 703 : A : 1671- 477 6 ( 2 011) 06-03 99- 04 Fabrication Process of MEMS THz Filters Zheng Y ing bin , Shi Zhigui, Xi Shiw ei, Zhao L ong, L i H ong, Zhao Xinghai ( I nst it ute of E lectr onic E ng ineer ing , Ch ina A cademy of E ng ineer ing P hy sics , M iany ang 62190 0, China) Abstract: T he eraher z ( T H z) f il er w as r ealized, and he process f low schem e w as inves iga ed w i h he micr oelec ronicm echanical sys ems ( M EM S) echniques, such as he silicon deep r ench e ching, surface m e alliza io n of deep rench, anodic bo nding and A uSi eu ec ic bonding echniques . T he herm al ox ida io n silico n ( SiO2 ) film o f 4 m w as ser ved as he e ching m ask, he f il er w i h he renches of 800 m dep h w as f abrica ed by dry e ching echnique. T he surf ace me alliza ion w as ob ained w i h he subs ra e il ed hro ug h he ion beam spu ering deposi ion and pla ing echniques. T he hickness of he me al f ilm inside he f il er is 3- 5 m. T he sealing w av eg uide fil er sample w i h hree layers w as fabrica ed by Siglass anodic bo nding and A uSi eu ec ic bonding echniques . T he es i