《部分阶梯埋氧SOI器件设计》-毕业设计（论文）.docxVIP

部分阶梯埋氧SOI器件设计 摘要 目前，随着社会的不断进步，科学技术不断创新，物理学界的半导体技术也在日益更新，不断发展。众所周知，Silicon On Insulator（简称SOI）高压集成电路中的核心器件，即SOI横向高压器件之所以在集成电路方面得以广泛利用，是由于其具有高速、低功耗、抗辐照以及易于隔离等优点。因此，现如今许多国内外物理学家、学者都对SOI器件做出了一系列的研究。但迄今为止，SOI横向高压器件均采用SOI作为埋层，且实用SOI器件击穿电压也过低；同时，就SOI横向器件的电场分布和耐压解析模型而言，现有的模型仅针对具有均匀厚度埋氧层和均匀厚度漂移区的SOI器件建立；而且，没有一个统一的理论来指导SOI横向高压器件的纵向耐压设计。 本文以电荷对局域场的屏蔽和电场调制为指导理论，通过改变SOI器件中埋氧层形状，提出部分阶梯埋氧SOI新结构，该结构不仅提高了传统器件的横向耐压，更进一步提高了器件的纵向耐压。 关键词：电场调制 埋氧层 击穿电压 阶梯埋氧 Design of Partial SOI Device with Step Buried Oxide ABSTRACT Now, with the progress of society, science and technology innovation, semiconductor technology physics community is also increasingly updated constantly evolving. As we all know, Silicon On Insulator (referred to as SOI) high-voltage integrated circuit core devices, SOI lateral high-voltage devices that reason be widely used in integrated circuits, because of its high speed, low power, radiation hardness and ease of isolation, etc. . Therefore, nowadays many domestic and foreign physicists, scholars have made a series of SOI devices for research. But so far, SOI SOI lateral high-voltage devices are used as the buried layer, and practical SOI device breakdown voltage is too low; Meanwhile, the electric field distribution and pressure on SOI lateral analytical model of the device, the existing models only for having buried oxide layer of uniform thickness and uniformity of the thickness of the drift region of SOI devices established; Moreover, there is no single theory to guide the design of vertical pressure SOI lateral high-voltage devices. In this paper, the charge of the local electric field shielding and guidance of modulation theory, SOI device by changing the shape of the buried oxide layer, the step portion of the buried oxide SOI proposed new structure, which not only improves the lateral pressure of the conventional device, and further improve the vertical pressure of the device. Key Words : Electric Field Modulation Buried Oxide L