uis完整的eas分析与test.ppt

Applying Power MOSFETs in an Unclamped Inductive Switching Environment Understanding the Importance of Unclamped Inductive Switching The vast number of loads driven today are inductive in nature such as solenoids, transformers, inductors, etc. Power MOSFET failure due to Unclamped Inductive Switching conditions is one of the most prevalent failure modes encountered Proper MOSFET specification and proper application of the MOSFET within the circuit is one of the easiest ways a designer can improve the reliability of their power MOSFET components This tutorial will discuss the UIS failure mechanism and explore how a designer can properly specify a MOSFET component to avoid UIS failures Terminology and Definitions Terminology and Definitions “IAS” – Current (I) Avalanche Single Pulse; The magnitude of IDS that a part can sustain in the avalanche mode for a single non-repetitive pulse “EAS” – Energy Avalanche Single Pulse; the level of energy that a part can dissipate in the avalanche mode for a single non-repetitive pulse “tAV” – Time in Avalanche; A term used in specifying UIS capability that signifies the amount of time that the device is in the avalanche mode of operation Terminology and Definitions “EAR” – Energy Avalanche Repetitive Pulse; same as a single pulse but for a repetitive pulse sequence “IAR” – Current (I) Avalanche Repetitive Pulse; same as a single pulse but for a repetitive pulse sequence Power MOSFET Structure The Parasitic Bipolar Transistor UIS Test Circuit and Idealized Waveforms UIS Testing – Actual Waveforms Actual Measured HUFA76645P3 UIS Capability UIS Capability vs Starting Junction Temperature for the HUFA76645P3 Across Varying Values of Inductance Observations on the UIS Capability Tests Results When the starting junction temperature exceeds the rated TJ(MAX) a significant avalanche current capability exists That is IAS a TJ(FAILURE) – TJ(START) The avalanche capability as a function of L shows the following relationship: IAS3.2 a